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首页> 外文期刊>Thin Solid Films >Cluster emission under femtosecond laser ablation of silicon
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Cluster emission under femtosecond laser ablation of silicon

机译：飞秒激光烧蚀硅下的团簇发射

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摘要

Rich populations of clusters have been observed after femtosecond laser ablation of bulk silicon in vacuum. Size and velocity distributions of the clusters as well as their charge states have been analyzed by refiectron time-of-flight mass spectrometry. An efficient emission of both neutral silicon clusters Si_n (up to n = 6) and their cations Si_n~+ (up to n= 10) has been observed. The clusters are formed even at very low laser fluences, below the ablation threshold, and their relative yield increases with fluence. We show the dependencies of the cluster yield as well as the expansion dynamics on both laser wavelength and laser fluence. The mechanisms of the cluster formation are discussed.
机译：在真空中飞秒激光烧蚀块状硅后，观察到大量簇。通过反射电子飞行时间质谱分析了团簇的大小和速度分布，以及它们的电荷状态。已经观察到中性硅团簇Si_n（最多n = 6）和它们的阳离子Si_n〜+（最多n = 10）的有效发射。甚至在非常低的激光能量密度下，仍在消融阈值以下形成团簇，并且它们的相对产量随着能量密度而增加。我们显示了簇产量的依赖性以及激光波长和激光注量的扩展动力学。讨论了团簇形成的机理。

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