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首页> 外文期刊>Thin Solid Films >Investigation of pulsed laser deposited crystalline PTFE thin layer with pulsed force mode AFM
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Investigation of pulsed laser deposited crystalline PTFE thin layer with pulsed force mode AFM

机译：脉冲力模原子力显微镜研究脉冲激光沉积结晶PTFE薄层。

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Teflon thin films were prepared via pulsed laser deposition using an ArF excimer laser (λ=193 nm, FWHM = 20 ns) from pressed powder pellets. The applied fluence was 6.25 + 0.23 J/cm~2, the number of pulses was 10 000, the pressure in the vacuum chamber was 2 X 10~(-5) Torr and the substrate temperature was 250 ℃. The layers were post-annealed at temperature within the range 320-500 ℃. The atomic force microscopy and pulsed force mode atomic force microscopy (PFM) investigations demonstrated that the effective surface reaches its maximum at 320 ℃. At higher temperatures (360-500 ℃) it decreased significantly to an approximately constant value. Measuring the local adhesion the difference between the adhesion forces at 320 and 360 ℃ was kept within the error range. Increasing the annealing temperatures, the adhesion force decreased over the investigated range. Post-annealing of the samples at 360 ℃ resulted in highly crystalline spherulites with lateral dimensions of several hundred micrometers. By optimizing the heating and cooling rate during the annealing the average dimension of spherulites increased and ringed structures were obtained. The PFM measurements showed that the adhesion force increased significantly compared to the similar samples without ringed structures.
机译：通过使用ArF受激准分子激光器（λ= 193 nm，FWHM = 20 ns）从压制的粉末颗粒通过脉冲激光沉积制备聚四氟乙烯薄膜。施加的通量为6.25 + 0.23 J / cm〜2，脉冲数为10000，真空室中的压力为2 X 10〜（-5）Torr，基板温度为250℃。在320-500℃范围内的温度下对各层进行后退火。原子力显微镜和脉冲力模式原子力显微镜（PFM）研究表明，有效表面在320℃达到最大值。在较高温度（360-500℃）下，它显着下降至近似恒定值。测量局部粘附力，将320℃和360℃下的粘附力之差保持在误差范围内。增加退火温度，在研究的范围内粘合力降低。在360℃下对样品进行后退火处理，得到了高度结晶的球晶，其横向尺寸为几百微米。通过优化退火过程中的加热和冷却速率，球晶的平均尺寸增加，并获得了环状结构。 PFM测量显示，与没有环状结构的类似样品相比，粘附力显着增加。

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