Effect of O_2 on NO removal by ammonia radical injection using one-cycle sinusoidal power source

Kiwamu Yamamoto; Ken Yukimura; Shinji Kambara; Hiroshi Moritomi; Toru Yamashita; Toshiro Maruyama

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Effect of O_2 on NO removal by ammonia radical injection using one-cycle sinusoidal power source

机译：O_2对单循环正弦电源氨自由基注入脱除NO的影响

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NO reduction experiment was performed by injecting ammonia radicals, which were externally generated by flowing the NH_3 gas diluted with Ar gas through a dielectric barrier discharge with a one-cycle sinusoidal-wave power source. The discharge was intermittently formed between coaxial cylindrical electrodes with a space of 1.5 mm at an applied peak-to-peak voltage of 3-25 kV, The generated radicals were injected into simulation gas (NO/O_2/N_2). The simulation gas contained 0-5.6% O_2, and the effect of O_2 on NO_x removal was discussed. The minimum reaction temperature for NO reduction was low when simulation gas contained O_2. High O_2 concentration (O_2 = 5.6%) in simulation gas, high repetition rate to NH_3, and high applied power to NH_3 decreased NO removal efficiency.

机译：通过注入氨自由基进行NO还原实验，氨自由基是由Ar气体稀释的NH_3气体通过单周期正弦波电源通过介电势垒放电流过外部产生的。在施加的3-25 kV峰-峰电压下，放电以1.5mm的间隔在同轴圆柱电极之间间歇地形成，将产生的自由基注入模拟气体（NO / O_2 / N_2）中。模拟气体中的O_2含量为0-5.6％，并讨论了O_2对NO_x去除的影响。当模拟气体中含有O_2时，NO还原的最低反应温度较低。模拟气体中的高O_2浓度（O_2 = 5.6％），对NH_3的高重复率以及对NH_3的高施加功率降低了NO去除效率。

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来源
《Thin Solid Films》 |2004年第1期|p.39-43|共5页
作者
Kiwamu Yamamoto; Ken Yukimura; Shinji Kambara; Hiroshi Moritomi; Toru Yamashita; Toshiro Maruyama;
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作者单位

Doshisha University, 1-3, Tatara-MiyakodaniKyotanabe, Kyoto, Japan;

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原文格式 PDF
正文语种 eng
中图分类工程材料学;
关键词
nitric oxide; dielectric barrier discharge; radical injection;

机译：一氧化氮;介质阻挡放电;自由基注入;

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Effect of O_2 on NO removal by ammonia radical injection using one-cycle sinusoidal power source

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