Structural and electrical properties of β-FeSi_2 single crystals grown using Sb solvent

H. Kannou; Y. Saito; M. Kuramoto; T. Takeyama; T. Nakamura; T. Matsuyama; H. Udono; Y. Maeda; M. Tanaka; Z.Q. Liu; H. Tatsuoka; H. Kuwabara

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Structural and electrical properties of β-FeSi_2 single crystals grown using Sb solvent

机译：Sb溶剂生长的β-FeSi_2单晶的结构和电学性质

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β-FeSi_2 bulk single crystals were grown using a temperature gradient solution growth (TGSG) process in Sb solvent. The microstructural and electrical properties of the β-FeSi_2 were then characterized. Rectangular-shaped single crystals were basically obtained with facetted crystallographic planes having the predominant growth direction of β-FeSi_2 [011]. No evidence for the formation of 90° order domains around the a-axis, domain boundaries and long period structures was observed by transmission electron microscopy (TEM). It was also found that the crystal shows n-type behavior, and that the donor ionization energy deduced from the temperature dependence of the electron concentration is approximately 0.12-0.15 eV. The nature of defects will be discussed along with the photoconductivity and the electron spin resonant (ESR) measurements.

机译：使用Sb溶剂中的温度梯度溶液生长（TGSG）工艺生长β-FeSi_2块状单晶。然后表征了β-FeSi_2的微观结构和电学性质。基本上得到具有以β-FeSi_2为主要生长方向的多面晶体平面的矩形单晶[011]。透射电子显微镜（TEM）未观察到围绕a轴，畴边界和长周期结构形成90°畴的证据。还发现该晶体表现出n型行为，并且从电子浓度的温度依赖性推导的施主电离能约为0.12-0.15eV。缺陷的性质将与光电导率和电子自旋共振（ESR）测量一起讨论。

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来源
《Thin Solid Films》 |2004年第1期|p.110-115|共6页
作者
H. Kannou; Y. Saito; M. Kuramoto; T. Takeyama; T. Nakamura; T. Matsuyama; H. Udono; Y. Maeda; M. Tanaka; Z.Q. Liu; H. Tatsuoka; H. Kuwabara;
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作者单位

Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8561, Japan;

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正文语种 eng
中图分类工程材料学;
关键词
electrical properties and measurements; silicides; structural properties; transmission electron microscopy (TEM);

机译：电性能和测量;硅化物;结构性能;透射电子显微镜（TEM）;

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Structural and electrical properties of β-FeSi_2 single crystals grown using Sb solvent

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