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首页> 外文期刊>Thin Solid Films >Morphological modification of β-FeSi_2 on Si(111) by high temperature growth and post-thermal annealing
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Morphological modification of β-FeSi_2 on Si(111) by high temperature growth and post-thermal annealing

机译：高温生长和后热退火对Si（111）上β-FeSi_2的形貌改性

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摘要

β-FeSi_2 crystals have been grown on Si(111) substrates, and morphological modification of the β-FeSi_2/Si(111) by high temperature growth and post-thermal annealing was investigated. The morphological feature of the β-FeSi_2 crystals significantly depends on the growth conditions, especially, substrate temperature during growth. The β-FeSi_2 continuous layers with relatively smooth surfaces were grown at the low substrate temperatures of 650-700 ℃ with exposure of the grown layers to Sb flux during the growth. On the other hand, nano-scaled islands have been grown at the higher substrate temperature of 850 ℃. The structural property, interfacial morphology and growth evolution of the β-FeSi_2 islands were examined, and compared with those for the layers grown at a lower substrate temperature. In addition, the morphological evolution of the β-FeSi_2/Si layers by post-thermal annealing was examined, and it was found that the interfacial smoothness between the β-FeSi_2 layers and the Si(111) substrates was improved by the post-thermal annealing on condition that a thin SiO_x amorphous overlayer should be formed on the β-FeSi_2 layer during the post-thermal annealing. The mechanisms of the morphological modification at the β-FeSi_2/Si(111) interface by the post-thermal annealing will also be discussed.
机译：β-FeSi_2晶体已经在Si（111）衬底上生长，并且研究了通过高温生长和后热退火对β-FeSi_2/ Si（111）的形态进行改性。 β-FeSi_2晶体的形态特征在很大程度上取决于生长条件，特别是生长过程中的衬底温度。在较低的衬底温度（650-700℃）下生长具有相对光滑表面的β-FeSi_2连续层，并使生长过程中的生长层暴露于Sb助熔剂。另一方面，纳米级岛已在850℃的较高衬底温度下生长。研究了β-FeSi_2岛的结构特性，界面形态和生长演变，并与在较低衬底温度下生长的层的结构性质，界面形态和生长演化进行了比较。此外，研究了后热退火引起的β-FeSi_2/ Si层的形貌演变，发现后热改善了β-FeSi_2/ Si和Si（111）衬底之间的界面光滑度在后热退火过程中，应在β-FeSi_2层上形成一层薄的SiO_x非晶态覆盖层。还讨论了通过后热退火在β-FeSi_2/ Si（111）界面进行形貌改性的机理。

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