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Fundamental aspects of low-temperature growth of microcrystalline silicon

机译：微晶硅低温生长的基本方面

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The fundamental aspects of the growth of microcrystalline silicon are discussed in terms of the gas-phase reactions, as well as surface reactions of Si-related radicals and atomic hydrogen. The nucleation of crystallites is related to the Si-H complex, accompanied by the compressive stress caused by breaking the Si-Si bond due to atomic hydrogen. The nucleation is followed by epitaxial-like growth. The low-temperature epitaxy was studied on Si(001) surfaces between 100 and 500 degreesC. The dependence on the hydrogen dilution and deposition temperature of the epitaxial thickness reveals crystal growth facilitated on a homogeneous hydrogen-covered surface. Finally, requirements for high crystallinity and low defect density under high deposition-rate conditions are discussed. Powder formation and its suppression using the hollow-mesh method are also described. (C) 2003 Elsevier Science B.V. All rights reserved. [References: 25]
机译：根据气相反应以及与硅有关的自由基和原子氢的表面反应，讨论了微晶硅生长的基本方面。晶粒的成核与Si-H配合物有关，伴随有由于原子氢而使Si-Si键断裂而引起的压应力。成核之后是外延样生长。在100至500摄氏度之间的Si（001）表面上研究了低温外延。依赖于氢稀释度和外延厚度的沉积温度表明，在均匀的氢覆盖表面上促进了晶体生长。最后，讨论了在高沉积速率条件下对高结晶度和低缺陷密度的要求。还描述了粉末的形成及其使用空心网方法的抑制。 （C）2003 Elsevier Science B.V.保留所有权利。 [参考：25]

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