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Effect of substrate and electrode on the crystalline structure and energy storage performance of antiferroelectric PbZrO_3 films

机译：基材和电极对消铁电焊膜晶体结构和能量储存性能的影响

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摘要

We report on the correlated investigation between crystal structures, field-induced phase transition, and energy storage properties of both polycrystalline and epitaxial antiferroelectric PhZrO3 (PZO) films grown by pulsed laser deposition on Si and SrTiO3 substrates. The structural characterization revealed the polycrystalline structure of the PZO films on Pt/Si and the epitaxial relationship between the films and the SrTiO3/Si and SrTiO3 substrates. Different to normal ferroelectric films, the polycrystalline PZO films show similar polarization loops but with a higher maximum polarization, resulting in a larger energy storage density under the same conditions. Due to the larger electric breakdown strength (2800 kV/cm), however, the epitaxial PZO films grown on SrTiO3/Si have a higher recoverable energy storage density (24.9 J/cm(3)) than those on Pt/Si (23.4 J/cm(3) at 2500 kV/cm) and on SrTiO3 (22.0 J/cm(3) at 2550 kV/cm). Additionally, the introduction of SrRuO3 oxide-electrode improves the endurance performance of energy storage properties of the films on STO/Si by suppressing the formation of the dead layer between the film and the electrode. In this way, applications based on PZO films would be more easily integrated on Si and open the way to develop high-power commercial energy storage systems.
机译：我们报道了通过脉冲激光沉积在Si和SRTiO3基板上生长的多晶和外延抗废料PHZRO3（PZO）膜的晶体结构，场诱导的相转变和能量储存性能的相关性研究。结构表征揭示了Pt / Si上的PZO膜的多晶结构及薄膜与SRTIO3 / Si和SRTiO3基材之间的外延关系。与正常的铁电膜不同，多晶PZO膜显示出类似的偏振环，但具有较高的最大偏振，导致在相同条件下的较大能量储存密度。然而，由于较大的电击强度（2800kV / cm），在SRTIO3 / Si上生长的外延PZO膜具有比Pt / Si上的可恢复能量储存密度更高（24.9J / cm（3））（23.4J / cm（3）在2500 kV / cm处，SRTIO3（22.0J / cm（3），2550 kV / cm）。另外，通过抑制膜和电极之间的死层的形成，Srruo3氧化物电极的引入提高了膜对STO / Si上的膜的能量储存性能。通过这种方式，基于PZO薄膜的应用将更容易地集成在SI上，并打开开发高功率商业能量存储系统的方式。

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