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首页> 外文期刊>Thin Solid Films >Preferential sputtering in quantitative sputter depth profiling of multi-element thin films
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Preferential sputtering in quantitative sputter depth profiling of multi-element thin films

机译：多元素薄膜定量溅射深度剖析的优先溅射

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摘要

Preferential sputtering plays an important role in the quantification of measured depth profiles. The distortion of the measured depth profile as compared to the original one has to be evaluated upon preferential sputtering in depth profiling. In the framework of the mixing-roughness-information depth (MRI) model, the influences of preferential sputtering on the depth profile of multi-element thin films are quantitatively evaluated as demonstrated for a layered structure of three elements with different sputtering rates and subsequent interfaces as A/BC/A. Moreover, the mass conservation upon Auger electron spectroscopy/X-ray photoelectron spectroscopy depth profiling of multi-element structure is discussed with respect to the preferential effect. Finally, as an example, the measured glow discharge optical emission spectroscope depth profiling data of 60x(3.0 nm Mo/0.3 nm B4C/3.7 nm Si)/Si(111) multilayer structure are quantitatively evaluated using the extended MRI model.
机译：优先溅射在测量的深度轮廓的定量中起着重要作用。与原始曲线相比，测量的深度分布的变形必须在优先溅射中进行深度分析。在混合粗糙度信息深度（MRI）模型的框架中，优先溅射对多元素薄膜的深度曲线的影响是定量评估的，以便为具有不同溅射速率和随后的接口的三个元素的分层结构进行说明作为/ bc / a。此外，关于优先效应讨论了多元素结构的螺旋钻电子光谱/ X射线光电子能谱深度分析的质量保护。最后，作为示例，使用扩展的MRI模型定量评估60倍（3.0nm / 0.3nm B4c / 3.7nm si）/ si（111）多层结构的测量的辉光放电光学发射光谱分析数据。

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