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首页> 外文期刊>Thin Solid Films >Ag-In-Se films on flexible architectural textiles as efficient material for optoelectronics applications: A preliminary study
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Ag-In-Se films on flexible architectural textiles as efficient material for optoelectronics applications: A preliminary study

机译：柔性建筑纺织品薄膜作为光电应用的高效材料：初步研究

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Ag-In-Se films have been deposited on commercial polyvinylchloride-coated polyester (PES/PVC) textile surface by combined chemical bath deposition and successive ionic layer adsorption and reaction methods. The three-stage process used to deposit these thin layers involved (i) a deposition of selenium on the (PES/PVC) textile surface, (ii) the transformation of selenium into Ag-Se by treatment with aqueous AgNO3 solutions. Se deposition and subsequent soaking into an AgNO3 solution were repeated up to six times to prepare Ag-Se precursor of various thickness. (iii) The Ag-Se precursor films were then doped with indium by treatment with an aqueous In (NO3)(3) solution. Scanning electron microscopy analysis revealed that Ag-In-Se film does not grow as a uniform film but rather through formation of the individual agglomerates of Ag-In-Se particles at specific locations followed by gradual covering of the entire textile surface with each subsequent Ag-Se deposition cycle. Energy dispersive spectroscopy confirmed the homogeneous distribution of Ag, Se and In in individual agglomerates. X-ray diffraction and X-ray photoelectron spectroscopy analysis indicated the formation of indium doped Ag2Se/Ag solid mixtures. Indium mostly accumulates in the top layer of the films, and its concentration decreases with each consecutive Ag-Se deposition cycle. The optical properties of the films were studied using UV-Vis spectrophotometry method. From the optical characterisation, it was found that the Ag-In-Se films are direct band gap semiconductors. The refractive indices of all studied Ag-In-Se films show an anomalous dispersion in the spectral range from 380 to 1100 nm. The results show that the values of band gap energy and refractive index parameters were very sensitive to the film composition.
机译：通过组合化学浴沉积和连续的离子层吸附和反应方法，已经沉积在商业聚氯乙烯涂覆的聚酯（PES / PVC）纺织表面上沉积了Ag-In-SE膜。用于将这些薄层沉积的三级过程（i）通过用AgNO 3水溶液处理溶酶对（PES / PVC）纺织表面，（ii）将硒的转化为Ag-Se。将Se沉积和随后浸泡成AgNO 3溶液，最多可达到六次以制备各种厚度的Ag-Se前体。 （iii）然后通过用（NO 3）（3）溶液中的水性处理掺杂Ag-Se前体薄膜。扫描电子显微镜分析显示，Ag-In-Se膜不会生长为均匀的膜，而是通过在特定位置的形成Ag-In-Se颗粒的各自附聚物之后，然后用每个随后的Ag逐渐覆盖整个纺织表面 - 沉积周期。能量分散光谱证实了Ag，Se和在个体附聚物中的均匀分布。 X射线衍射和X射线光电子能谱分析表明掺杂掺杂Ag2Se / Ag固体混合物的形成。铟主要累积在薄膜的顶层中，并且其浓度随着每个连续的Ag-SE沉积循环而降低。使用UV-Vis分光光度法研究薄膜的光学性质。从光学表征中，发现Ag-In-SE膜是直接带隙半导体。所有研究的AG-SE膜的折射率显示出在380至1100nm的光谱范围内的异常分散体。结果表明，带隙能量和折射率参数的值对膜组合物非常敏感。

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