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MoS_2 nanoworm thin films for NO_2 gas sensing application

机译:MOS_2 NANOWOMOM薄膜用于NO_2气体传感应用

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摘要

MoS2 thin films of different thickness have been deposited using direct current magnetron sputtering. These structures have been utilized as a gas sensor without any additional processing. As the thickness of the MoS2 film increases, surface morphology of the MoS2 films changes from nanoparticle to nanoworm like structures. Nanoworm structure of MoS2 exhibits large surface area and high porosity which provides the quick transfer of charge carriers and active sites for the adsorption and desorption of NO2 gas molecules. A rapid increase in NO2 sensing response is correlated with change in the morphology of MoS2 thin films from nanoparticle to nanoworm like structures. The gas sensing response of nanoworm like MoS2 thin films is measured using the non interdigitated type contacts. The cross-sensitivity of MoS2 nanoworm sensor for NH3, H-2, CO and NO gases is also studied. Our results demonstrate the potential application of such MoS2 nanostructure for fabricating a highly sensitive NO2 gas sensor.
机译:使用直流磁控溅射已经沉积不同厚度的MOS2薄膜。这些结构已被用作燃气传感器而没有任何额外的处理。随着MOS2膜的厚度增加,MOS2膜的表面形貌从纳米颗粒变化为纳米云,如结构。 MOS2的纳米仪结构具有大的表面积和高孔隙率,其提供了用于吸附和解吸NO 2气体分子的电荷载体和活性位点的快速转移。在NO2感测响应的快速增加与二硫化钼薄膜的形态从纳米颗粒到样结构nanoworm变化相关。使用非共分型触点测量MOS2薄膜等纳米风量的气体传感响应。还研究了MOS2纳米型传感器的交叉敏感性,用于NH3,H-2,CO和NO气体。我们的结果表明,这种MOS2纳米结构的潜在应用用于制造高度敏感的NO2气体传感器。

著录项

  • 来源
    《Thin Solid Films》 |2021年第1期|138625.1-138625.8|共8页
  • 作者单位

    Indian Inst Technol Roorkee Dept Phys Roorkee 247667 Uttar Pradesh India;

    Indian Inst Technol Roorkee Inst Instrumentat Ctr Nanosci Lab Roorkee 247667 Uttar Pradesh India;

    Indian Inst Technol Roorkee Inst Instrumentat Ctr Nanosci Lab Roorkee 247667 Uttar Pradesh India;

    Indian Inst Technol Roorkee Dept Phys Roorkee 247667 Uttar Pradesh India;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Molybdenum disulfide; Nanoworm; Nitrogen dioxide; Gas sensor; Sputtering;

    机译:二硫化钼;纳米污染;二氧化氮;气体传感器;溅射;

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