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Multi-junction Ⅲ-Ⅴ solar cells: current status and future potential

机译:多结Ⅲ-Ⅴ太阳能电池:现状和未来潜力

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Our recent R&D activities of Ⅲ-Ⅴ compound multi-junction (MJ) solar cells are presented. Conversion efficiency of InGaP/InGaAs/Ge has been improved up to 31-32% (AM1.5) as a result of technologies development such as double hetero-wide band-gap tunnel junction, InGaP-Ge hetero-face structure bottom cell, and precise lattice-matching of InGaAs middle cell to Ge substrate by adding indium into the conventional GaAs layer. For concentrator applications, grid structure has been designed in order to reduce the energy loss due to series resistance, and world-record efficiency InGaP/InGaAs/Ge 3-junction concentrator solar cell with an efficiency of 37.4% (AM1.5G, 200-suns) has been fabricated. In addition, we have also demonstrated high-efficiency and large-area (7000 cm~2) concentrator InGaP/InGaAs/ Ge 3-junction solar cell modules of an outdoor efficiency of 27% as a result of developing high-efficiency InGaP/InG-aAs/Ge 3-junction cells, low optical loss Fresnel lens and homogenizers, and designing high thermal conductivity modules. Future prospects are also presented. We have proposed concentrator Ⅲ-Ⅴ compound MJ solar cells as the 3rd generation solar cells in addition to 1st generation crystalline Si solar cells and 2nd generation thin-film solar cells. We are now developing low-cost and high output power concentrator MJ solar cell modules with an output power of 400 W/m~2 for terrestrial applications.
机译:介绍了我们最近对Ⅲ-Ⅴ型复合多结(MJ)太阳能电池的研发活动。 InGaP / InGaAs / Ge的转换效率已提高至31-32%(AM1.5),这是由于技术发展的结果,例如双异质宽带隙隧道结,InGaP-Ge异质面结构底部电池,通过将铟添加到传统的GaAs层中,实现InGaAs中间电池与Ge衬底的精确晶格匹配。对于集中器应用,已设计了网格结构,以减少由于串联电阻引起的能量损失,以及效率达到37.4%的世界纪录效率InGaP / InGaAs / Ge三结集中器太阳能电池(AM1.5G,200-太阳)已被捏造。此外,由于开发了高效率的InGaP / InG,我们还展示了高效率和大面积(7000 cm〜2)集中器InGaP / InGaAs / Ge 3结太阳能电池模块,其室外效率为27% -aAs / Ge 3结电池,低光损耗菲涅耳透镜和均质器,并设计高导热率模块。还介绍了未来的前景。除了第一代晶体硅太阳能电池和第二代薄膜太阳能电池以外,我们还提出了聚光体Ⅲ-Ⅴ型复合MJ太阳能电池作为第三代太阳能电池。我们现在正在开发低成本,高输出功率的MJ太阳能电池组件,输出功率为400 W / m〜2,用于地面应用。

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