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Requirements for a GaAsBi 1eV sub-cell in a GaAs-based multi-junction solar cell

机译:基于GaAs的多结太阳能电池中GaAsBi 1eV子电池的要求

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摘要

Multi-junction solar cells achieve high efficiency by stacking sub-cells of different bandgaps (typically GaInP/GaAs/Ge) resulting in efficiencies in excess of 40%. The efficiency can be improved by introducing a 1 eV absorber into the stack, either replacing Ge in a triple-junction configuration or on top of Ge in a quad-junction configuration. GaAs0.94Bi0.06 yields a direct-gap at 1 eV with only 0.7% strain on GaAs and the feasibility of the material has been demonstrated from GaAsBi photodetector devices. The relatively high absorption coefficient of GaAsBi suggests sufficient current can be generated to match the sub-cell photocurrent from the other sub-cells of a standard multi-junction solar cell. However, minority carrier transport and background doping levels place constraints on both p/n and p-i-n diode configurations. In the possible case of short minority carrier diffusion lengths we recommend the use of a p-i-n diode, and predict the material parameters that are necessary to achieve high efficiencies in a GaInP/GaAs/GaAsBi/Ge quad-junction cell.
机译:多结太阳能电池通过堆叠不同带隙的子电池(通常为GaInP / GaAs / Ge)来实现高效率,从而产生超过40%的效率。可以通过将1 eV吸收剂引入电池堆来提高效率,该吸收器可以替换三结结构的Ge或替换四结结构的Ge顶部。 GaAs0.94Bi0.06在1 eV时产生直接间隙,对GaAs仅产生0.7%的应变,该材料的可行性已从GaAsBi光电探测器装置中得到证明。 GaAsBi的相对较高的吸收系数表明可以产生足够的电流来匹配标准多结太阳能电池的其他子电池的子电池光电流。然而,少数载流子传输和背景掺杂水平对p / n和p-i-n二极管配置都施加了限制。在少数载流子扩散长度可能较短的情况下,我们建议使用p-i-n二极管,并预测在GaInP / GaAs / GaAsBi / Ge四结电池中实现高效率所需的材料参数。

著录项

  • 来源
    《Semiconductor science and technology》 |2015年第9期|094010.1-094010.6|共6页
  • 作者单位

    Univ London Imperial Coll Sci Technol & Med, London, England;

    Univ London Imperial Coll Sci Technol & Med, London, England;

    Univ London Imperial Coll Sci Technol & Med, London, England;

    Univ London Imperial Coll Sci Technol & Med, London, England;

    Univ London Imperial Coll Sci Technol & Med, London, England;

    Univ London Imperial Coll Sci Technol & Med, London, England;

    Univ London Imperial Coll Sci Technol & Med, London, England;

    Univ Sheffield, Sheffield, S Yorkshire, England;

    Univ Surrey, Adv Technol Inst, Guildford GU2 5XH, Surrey, England|Univ Surrey, Dept Phys, Guildford GU2 5XH, Surrey, England;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    bismide; photovoltaics; solar cell; multi-junction;

    机译:铋;光伏;太阳能电池;多结;
  • 入库时间 2022-08-18 01:30:12

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