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Three-Dimensional Crystal-Plasticity Based Model for Intrinsic Stresses in Multi-junction Photovoltaic

机译:基于三维晶体塑性的多结光伏本征模型

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Our understanding for intrinsic stresses and defects evolution in photovoltaic devices has became an essential part of new developments. In particular, Multi-Junction Photovoltaic (MJ-PV) modules depend on multi-layer structures that may suffer high dislocation-densities as a result of high lattice and thermal expansion coefficient mismatch. These defects limit the performance, reliability, and lifetime of PV devices. In the current study, a three-dimensional multiple-slip crystal-plasticity model and specialized finite-element formulations are used to investigate InGaN growth on Si substrates. The formulation is based on accounting for thermal and intrinsic stresses as a result of different processing conditions and microstructures. Furthermore, the formulation was used to investigate a recently developed technique, Embedded Void Approach (EVA), which can be used to address both the high density of defects and the cracking/bowing of InGaN growth on Si. The current work lays the groundwork for more extensive use of silicon in MJ-PV devices.
机译:我们对光伏器件内在应力和缺陷演变的理解已成为新发展的重要组成部分。特别地,多结光伏(MJ-PV)模块依赖于多层结构,由于高晶格和热膨胀系数不匹配,多层结构可能遭受高位错密度。这些缺陷限制了PV设备的性能,可靠性和寿命。在当前的研究中,使用三维多重滑移晶体可塑性模型和专门的有限元公式来研究InGaN在Si衬底上的生长。该公式基于对不同加工条件和微观结构的热应力和固有应力的考虑。此外,该配方用于研究最近开发的技术,嵌入式空隙法(EVA),该技术可用于解决缺陷的高密度以及Si上InGaN生长的开裂/弯曲问题。当前的工作为在MJ-PV器件中更广泛地使用硅打下了基础。

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