• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文学位 >Nanolithography and nanofabrication using hydrogen silsesquioxane resists.
【24h】

Nanolithography and nanofabrication using hydrogen silsesquioxane resists.

机译：使用氢倍半硅氧烷抗蚀剂的纳米光刻和纳米加工。

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Tremendous interest in nanotechnology has required versatile patterning tools for the fabrication of nanometer-scale structures with high precision and electron-beam lithography (EBL) has been widely used for this purpose. Hydrogen silsesquioxane (HSQ) has received much attention as a new class of negative-tone electron-beam resist. Due to its high resolution and excellent etch resistance, HSQ resist has proven to be very useful in various nanofabrication processes. The focus of this thesis has been on the development of EBL processes and the investigations of material aspects of HSQ resists. For resolution enhancement, the effects of developer temperatures and substrates have been examined. By increasing resist contrast or reducing the effects of backscattered electrons, high quality of ultra-dense nanostructures have been realized. The changes in chemical structures and properties of thermally cured and electron-beam-exposed HSQ films have been characterized to achieve the optimized processing. Development characteristics and etching properties have been comparatively studied. Furthermore, spatial characterization has been performed to identify chemical reactions in HSQ resists during electron-beam exposure. As a possible application of HSQ nanostructures, triangular nanochannels fabricated using the resists collapse technique have been demonstrated.
机译：对纳米技术的极大兴趣要求使用通用的构图工具来制造具有高精度的纳米级结构，并且电子束光刻（EBL）已广泛用于此目的。氢倍半硅氧烷（HSQ）作为一类新型的负电子束抗蚀剂受到了广泛的关注。由于其高分辨率和出色的抗蚀刻性，HSQ抗蚀剂已被证明在各种纳米加工工艺中非常有用。本文的重点是EBL工艺的发展和HSQ抗蚀剂材料方面的研究。为了提高分辨率，已经检查了显影剂温度和基材的影响。通过增加抗蚀剂对比度或减少反向散射电子的影响，已经实现了高质量的超致密纳米结构。热固化和电子束暴露的HSQ膜的化学结构和性质的变化已被表征，以实现优化的加工。已经对显影特性和蚀刻性能进行了比较研究。此外，已经进行了空间表征，以识别电子束曝光期间HSQ抗蚀剂中的化学反应。作为HSQ纳米结构的一种可能的应用，已经证明了使用抗蚀剂塌陷技术制造的三角形纳米通道。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号