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Pit initiation in AlO{sub x}/Al thin films (Technical Report) | OSTI.GOV

机译:alO {sub x} / al薄膜中的坑开始(技术报告)| OsTI.GOV

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摘要

The electrochemical responses of AlO{sub x}/Al thin films have been investigated as a function of film growth conditions which produce films with different grain orientation, size and morphology. Films with smooth, 150 nm diameter, randomly oriented grains show a higher pitting potential and lower passive current than those films with large grain-boundary grooving from a mixture of smooth micron-sized, (200)-oriented grains and 300--500 nm diameter, (220)-oriented grains. These results suggest that surface roughness from grain-boundary grooving affects the pitting resistance more strongly than does the grain boundary density.

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  • 作者单位
  • 年(卷),期 2000(),
  • 年度 2000
  • 页码
  • 总页数 7
  • 原文格式 PDF
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  • 网站名称 美国能源部文献库
  • 栏目名称 所有文件
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  • 入库时间 2022-08-19 17:22:43
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