Optical Properties of GaAs Confined in the Pores of MCM-41

V. I. Srdanov; I. Alxneit; G. D. Stucky

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Optical Properties of GaAs Confined in the Pores of MCM-41

机译：限制在MCM-41孔中的GaAs的光学性质

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We report on GaAs/MCM-41 heterostructures synthesized by deposition of GaAs into the channels of MCM-41 using metalloorganic chemical vapor deposition. MCM-41 consists of an ordered array of silica tubules comprising pores with uniform and controllable diameter in the nanometer range. The GaAs/MCM-41 heterostructures show blue-shifted absorption and broad visible photoluminescence even at room temperature. The photoluminescence maximum depends on the MCM-41 pore diameter supporting formation of size-quantized semiconductor crystallites whose growth is restricted by the diameter of the pores of MCM-41. The shift in the photoluminescence spectra as a function of the excitation wavelength suggests a broad size distribution of the GaAs particles crystallized on the outside of MCM-41 and a relatively narrow size distribution of the GaAs panicles inside the channels of MCM-41.

机译：我们报告了通过使用金属有机化学气相沉积将GaAs沉积到MCM-41的通道中而合成的GaAs / MCM-41异质结构。 MCM-41由有序排列的二氧化硅小管组成，该二氧化硅小管包含直径在纳米范围内的均匀且可控制的孔。 GaAs / MCM-41异质结构即使在室温下也显示出蓝移吸收和宽泛的可见光致发光。最大的光致发光取决于MCM-41孔径，该孔径支持形成尺寸受限的半导体微晶，其生长受MCM-41孔径的限制。光致发光光谱随激发波长的变化表明在MCM-41外部结晶的GaAs颗粒的粒径分布较宽，而在MCM-41通道内的GaAs穗的粒径分布较窄。

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《The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical》 |1998年第20期|共4页
作者
V. I. Srdanov; I. Alxneit; G. D. Stucky;
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正文语种 eng
中图分类物理化学（理论化学）、化学物理学;
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1. Optical Properties of GaAs Confined in the Pores of MCM-41 [J] . V. I. Srdanov, I. Alxneit, G. D. Stucky, The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical . 1998,第18期

机译：限制在MCM-41孔中的GaAs的光学性质
2. Effect of Strongly Mismatched GaAs and InAs Inserts in a InAlAs Buffer Layer on the Structural and Optical Properties of Metamorphic InAs(Sb)/InGaAs/InAlAs/GaAs Quantum-Confined Heterostructures [J] . Solovev V. A., Chernov M. Yu, Komkov O. S., JETP Letters . 2019,第6期

机译：强烈不匹配的GaAs和InAs在Inalas缓冲层中的影响在变质InAs（Sb）/ InGaAs / Inalas / GaAs量子限制异质结构的结构和光学性质上
3. The optical properties of heterostructures with quantum-confined InGaAsN layers on a GaAs substrate and emitting at 1.3-1.55 mu m [J] . Kryzhanovskaya NV, Egorov AY, Mamutin VV, Semiconductors . 2005,第6期

机译：在GaAs衬底上具有量子限制的InGaAsN层的异质结构的光学性质，并且在1.3-1.55μm处发射
4. Dynamical Properties of Terahertz Radiation from Coherent Longitudinal Optical Phonons Confined in a GaAs/AlAs Multiple Quantum Well [C] . International conference on ultrafast phenomena topical meeting and tabletop exhibit . 2006

机译：从GaAs / Alas多量子阱内局限于GaAs / Alas局限性的长赫兹辐射的动态特性
5. Lifetime Of Anharmonic Decay of Optical Phonons in Confined GaAs Structure [D] . Krishnababu, Kirupavathi. 2017

机译：狭窄的GaAs结构中光学声音anharmonic衰减的寿命
6. The electronic and optical properties of quaternary GaAs1-x-yNxBiy alloy lattice-matched to GaAs: a first-principles study [O] . Xiaoyang Ma, Dechun Li, Shengzhi Zhao, 2014

机译：四元GaAs1-x-y的电子和光学性质ñX双ÿ 与GaAs晶格匹配的合金：第一性原理研究
7. Collective excitations in liquid D2 confined within the mesoscopic pores of a MCM-41 molecular sieve [O] . Mondelli, C., González, M.A., Albergamo, F., 2016

机译：液体D2中的集体激发被限制在MCM-41分子筛的介观孔内
8. Proton Induced Optical Degradation in InGaAs/GaAs Quantum Confined Structures [R] . Leon, R., Swift, G., Magness, B., 1999

机译：质子诱导InGaas / Gaas量子限制结构的光学退化

Optical Properties of GaAs Confined in the Pores of MCM-41

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