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首页> 外文期刊>Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites >Characterization of nanocrystalline silicon carbide films
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Characterization of nanocrystalline silicon carbide films

机译：纳米晶碳化硅膜的表征

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摘要

Amorphous silicon carbide films were obtained by plasma enhanced chemical vapor deposition (PECVD) technique using a gas mixture of silane, methane, and hydrogen with a high excitation frequency and a high hydrogen dilution ratio. The high temperature annealing behavior of the amorphous silicon carbide films was studied by annealing at 1373 K for 1 h in nitrogen atmosphere. A very thin Au film was deposited on part of the films to investigate the metal induced crystallization effect. Well aligned nanotubes were found on the silicon carbide films covered by a thin gold layer after the high temperature annealing by atomic force microscopy. Further study is necessary to identify the nature of the nanotubes and elucidate their growth mechanism. (c) 2006 Elsevier B.V. All rights reserved.
机译：通过等离子体增强化学气相沉积（PECVD）技术，使用具有高激发频率和高氢稀释比的硅烷，甲烷和氢的气体混合物，获得了非晶碳化硅膜。通过在氮气氛下于1373 K下退火1 h，研究了非晶碳化硅膜的高温退火行为。非常薄的金膜沉积在部分膜上，以研究金属诱导的结晶效果。在通过原子力显微镜进行高温退火之后，在被薄金层覆盖的碳化硅膜上发现了排列良好的纳米管。为了确定纳米管的性质并阐明其生长机理，有必要做进一步的研究。 （c）2006 Elsevier B.V.保留所有权利。

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