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Recent progress in micromorph solar cells

机译:微晶太阳能电池的最新进展

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Recently, we have demonstrated that intrinsic hydrogenated microcrystalline silicon, as deposited by the very high frequency glow-discharge technique, can be used as the active layers of p-i-n solar cells. Our microcrystalline silicon represents a new form of thin film crystalline silicon that can be deposited (in contrast to any other approach found in literature) at substrate temperatures as low as 200 degrees C. The combination of amorphous and microcrystalline material leads to a 'real' silicon-based tandem structure, which we label 'micromorph' cell. Meanwhile, stabilised efficiencies of 10.7% have been confirmed. In this paper, we present an improved micromorph tandem cell with 12% stabilised efficiency measured under outdoor conditions. Dark conductivity and combined SIMS measurements performed on intrinsic microcrystalline silicon layers reveal a post-oxidation of the film surface. However, a perfect chemical stability of entire microcrystalline cells as well as micromorph cells is presented. Variations of the p/i interface treatment show that an increase of the open circuit voltages from 450 mV up to 568 mV are achievable for microcrystalline cells, but such devices have reduced fill factors. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 22]
机译:最近,我们已经证明,通过超高频辉光放电技术沉积的本征氢化微晶硅可以用作p-i-n太阳能电池的活性层。我们的微晶硅代表了薄膜晶硅的一种新形式,可以在低至200摄氏度的衬底温度下沉积(与文献中发现的任何其他方法相比)。非晶和微晶材料的结合导致“真实”基于硅的串联结构,我们将其标记为“微晶”单元。同时,已确认稳定效率为10.7%。在本文中,我们提出了一种改进的微晶串联电池,在室外条件下测得的稳定效率为12%。在本征微晶硅层上进行的暗电导率和SIMS组合测量显示了膜表面的后氧化。然而,呈现了整个微晶细胞以及微晶型细胞的完美化学稳定性。 p / i界面处理的变化表明,对于微晶电池,可以实现从450 mV到568 mV的开路电压增加,但是这种器件的填充系数降低了。 (C)1998 Elsevier Science B.V.保留所有权利。 [参考:22]

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