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Vacuum ultraviolet absorption of silica samples

机译:二氧化硅样品的真空紫外线吸收

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摘要

Optical absorption analysis in the ultraviolet and vacuum ultraviolet region from 4.0 to 9.0 eV has been performed on different silica materials. We analysed natural and synthetic silica samples, both as grown and irradiated with different irradiations, neutrons, #gamma#, and ultraviolet photons. Regardless of irradiation we always observed in the spectrum of irradiated samples the growth of the band at 5.8 eV, a band attributed to the E' paramagnetic center. Comparing this absorption under different irradiation, we suggest the B_2 and E absorption bands are not correlated and therefore cannot be assigned to the same defect.
机译:已经在不同的二氧化硅材料上进行了从4.0到9.0 eV的紫外线和真空紫外线区域的光吸收分析。我们分析了天然和合成的二氧化硅样品,这些样品是通过不同的辐照,中子,#γ#和紫外线光子生长和辐照的。无论辐射如何,我们始终在被辐射样品的光谱中观察到5.8 eV处的能带增长,该能带归因于E'顺磁中心。比较不同照射下的吸收率,我们建议B_2和E的吸收带不相关,因此不能分配给相同的缺陷。

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