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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes
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Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes

机译：（Ga，In）（N，As）/ GaAs激光二极管的特征温度分析

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摘要

The characteristic temperatures of the threshold current density, T-0, and external differential quantum efficiency, T-1, of a series of (Ga, In)(N, As)/GaAs quantum well (QW) laser diodes are measured in the wavelength range from 1 to 1.5 mu m. It is found that both T-0 and T-1 strongly decrease with increasing lasing wavelength. The origin of this degradation is shown to be, in the case of T-0, mostly dominated by a decrease in the transparency current density characteristic temperature, an increase in the optical losses and a decrease in the modal gain. The degradation of T-1 is mainly due to the increase in the optical losses. The effective carrier recombination lifetime in the QW is shown to decrease from 1.2 to 0.2 ns with N content up to 2%, in good agreement with previous reports that link this low lifetime to non-radiative monomolecular recombination through defects in the QW. Carrier leakage is ruled out as the dominant process degrading T-0 and T-1 on the basis of the temperature dependence of the effective carrier recombination lifetime.
机译：在半导体器件中测量了一系列（Ga，In）（N，As）/ GaAs量子阱（QW）激光二极管的阈值电流密度T-0和外部差分量子效率T-1的特征温度。波长范围从1到1.5微米。可以发现，随着激光波长的增加，T-0和T-1都大大降低。在T-0的情况下，这种劣化的起因主要是由透明电流密度特性温度的降低，光学损耗的增加和模态增益的降低所决定的。 T-1的劣化主要是由于光学损耗的增加。 QW中的有效载流子重组寿命从1.2 ns降低到0.2 ns，其中N含量高达2％，这与以前的报道很好地吻合，后者将这种低寿命与通过QW的缺陷与非辐射单分子重组联系起来。根据有效载流子复合寿命的温度依赖性，排除载流子泄漏是降解T-0和T-1的主要过程。

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