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Facile synthesis of wide-bandgap fluorinated graphene semiconductors

机译：宽带隙氟化石墨烯半导体的简便合成

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摘要

The bandgap opening of graphene is extremely important for the expansion of the applications of graphene-based materials into optoelectronics and photonics. Current methods to open the bandgap of graphene have intrinsic drawbacks including small bandgap openings, the use hazardous/harsh chemical oxidations, and the requirement of expensive chemical-vapor deposition technologies. Herein, an eco-friendly, highly effective, low-cost, and highly scalable synthetic approach is reported for synthesizing wide-bandgap fluorinated graphene (F-graphene or or fluorographene) semiconductors under ambient conditions. In this synthesis, ionic liquids are used as the only chemical to exfoliate commercially available fluorinated graphite into single and few-layer F-graphene. Experimental and theoretical results show that the bandgap of F-graphene is largely dependent on the F coverage and configuration, and thereby can be tuned over a very wide range.
机译：石墨烯的带隙开口对于将石墨烯基材料的应用扩展到光电子学和光子学中至关重要。当前打开石墨烯带隙的方法具有固有的缺点，包括小的带隙开口，使用危险/苛刻的化学氧化以及需要昂贵的化学气相沉积技术。本文中，报道了在环境条件下合成宽带隙氟化石墨烯（F-石墨烯或氟代石墨烯）半导体的生态友好，高效，低成本和高度可扩展的合成方法。在这种合成中，离子液体被用作将市售的氟化石墨剥离成单层和少层F-石墨烯的唯一化学物质。实验和理论结果表明，F-石墨烯的带隙在很大程度上取决于F的覆盖范围和构型，因此可以在很宽的范围内进行调谐。

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