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首页> 外文期刊>ACS applied materials & interfaces >Flexible Free-Standing III-Nitride Thin Films for Emitters and Displays
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Flexible Free-Standing III-Nitride Thin Films for Emitters and Displays

机译：用于发射极和显示器的柔性自由式III型氮化物薄膜

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The majority of a GaN light-emitting diode (LED) is released from its sapphire substrate through selective-area laser lift-off to form a freely suspended light emitter. By virtue of being suspended in air without supporting substrates, the ultrathin crystalline and crack-free film possesses flexibility and bendability. The free-standing LEDs benefit from significant relaxation of strain, evident from red-shifting of the E-2(high) phonon frequencies as measured by Raman spectroscopy toward those of strain-free free-standing GaN substrates. The phonon frequencies remain invariant upon bending of the film; this indicates that the properties of the flexible device will not be dependent on the bending curvatures. The observation of pronounced spectral blue-shifts from the photoluminescence (PL) spectrum from the flexible regions further confirms the occurrence of strain relaxation in the quantum wells. Being free-standing and thus lacking a direct heat-sinking pathway, emissions from the different regions of the suspended film can be affected by thermal effects to different extents, which are investigated by long-wave infrared thermometry. Heat accumulation is determined to be most severe at the far end of the flexible stripe at higher currents, leading to reduced efficiencies and electroluminescence (EL) spectral red-shifts. Based on this architecture, a monolithic 3 x 4 dot-matrix microdisplay prototype is demonstrated, comprising three adjacent flexible stripe emitters with four individually addressable pixels on each stripe. This proof-of-concept demonstration opens up new opportunities for GaN optoelectronics for a wide range of flexible display and visual applications.
机译：大部分GaN发光二极管（LED）通过选择性区域激光剥离从其蓝宝石衬底中释放出来，从而形成自由悬浮的发光体。由于悬浮在空气中而没有支撑基底，因此超薄晶体和无裂纹膜具有柔韧性和可弯曲性。自支撑式LED受益于应变的显着松弛，这可以通过拉曼光谱法测量到E-2（高）声子频率向无应变的自支撑GaN衬底的红移来证明。声子的频率在薄膜弯曲时保持不变。这表明柔性装置的特性将不取决于弯曲曲率。从柔性区域的光致发光（PL）光谱中观察到明显的光谱蓝移，进一步证实了量子阱中应变弛豫的发生。由于是独立式的，因此缺乏直接的散热路径，因此悬浮膜不同区域的发射会受到热效应的不同程度的影响，可通过长波红外测温法对其进行研究。在较高电流下，在柔性条的远端，热量累积被确定为最严重，从而导致效率降低和电致发光（EL）光谱红移。基于此体系结构，展示了一个整体式3 x 4点矩阵微显示器原型，该原型包括三个相邻的柔性条纹发射器，每个条纹上带有四个可单独寻址的像素。这一概念验证演示为GaN光电技术在各种柔性显示和视觉应用中打开了新的机遇。

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