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首页> 外文期刊>Applied optics >Influence of thermal annealing and ultraviolet light irradiation on LaF_(3) thin films at 193 nm
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Influence of thermal annealing and ultraviolet light irradiation on LaF_(3) thin films at 193 nm

机译：热退火和紫外线照射对193 nm LaF_（3）薄膜的影响

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摘要

Lanthanum fluoride (LaF_(3)) thin films were prepared by resistive heating evaporation and electron-beam gun evaporation under the same deposition rate, deposition substrate temperature, and vacuum pressure. The coated LaF_(3) films were then treated by heat annealing and UV light irradiation. The optical properties, microstructures, stress, and laser-induced damage threshold (LIDT) at a wavelength of 193 nm were investigated. The surface roughness, optical loss, stress, and LIDT of the films were improved after the annealing. The films had better properties when irradiated by UV light as compared with heat annealing.
机译：通过电阻加热蒸发和电子束枪蒸发在相同的沉积速率，沉积衬底温度和真空压力下制备氟化镧（LaF_（3））薄膜。然后，通过热退火和UV光照射来处理涂覆的LaF_（3）膜。研究了在193 nm波长下的光学性质，微观结构，应力和激光诱导损伤阈值（LIDT）。退火后，薄膜的表面粗糙度，光学损耗，应力和LIDT得到改善。与热退火相比，该膜在用紫外线照射时具有更好的性能。

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