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Reflectance measurements and optical constants in the extreme ultraviolet-vacuum ultraviolet regions for SiC with a different C/Si ratio

机译:具有不同C / Si比的SiC的反射率测量和极端紫外-真空紫外区的光学常数

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摘要

Reflectance versus incidence angle measurements have been performed from 5 to 152 nm on samples of SiC with a different C/Si ratio deposited with rf magnetron sputtering. The optical constants of the material at different wavelengths have been determined by using a curve-fitting technique of reflectance values versus incidence angle. Complementary measurements of the incident beam polarization, film thickness, surface roughness, and stoichiometry were performed to complete the analysis of the samples.
机译:已经对通过射频磁控溅射沉积的具有不同C / Si比的SiC样品从5到152 nm进行了反射率与入射角的测量。通过使用反射率值与入射角的曲线拟合技术,可以确定材料在不同波长下的光学常数。对入射光束的偏振,膜厚,表面粗糙度和化学计量进行了补充测量,以完成对样品的分析。

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