The reduction in size and the increase in speed of opto- and magnetoelectronic devices is making the probability of nonequilibrium electron-phonon phenomena greater, leading to increased thermal resistance in these devices. The measurement of electron-phonon coupling in materials in these devices is becoming increasingly important for accurate thermal management. Here femtosecond thermoreflectance is used to measure the electron-phonon coupling factor in thin Ni films of varying thickness grown on Si and glass substrates. The thermoreflectance response is measured at 1.3 and 1.55 eV, yielding drastically different responses due to the Fermi-level transition at 1.3 eV in Ni. The influence of this transition on the thermoreflectance response results in a measurement of the electron-phonon coupling factor that is twice as high as that recorded in previous measurements that were unaffected by the Fermi-level transition.
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