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Electrochemical metallization memories - Fundamentals, applications, prospects

机译：电化学金属化存储器-基本原理，应用，前景

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摘要

This review focuses on electrochemical metallization memory cells (ECM), highlighting their advantages as the next generation memories. In a brief introduction, the basic switching mechanism of ECM cells is described and the historical development is sketched. In a second part, the full spectra of materials and material combinations used for memory device prototypes and for dedicated studies are presented. In a third part, the specific thermodynamics and kinetics of nanosized electrochemical cells are described. The overlapping of the space charge layers is found to be most relevant for the cell properties at rest. The major factors determining the functionality of the ECM cells are the electrode reaction and the transport kinetics. Depending on electrode and/or electrolyte material electron transfer, electro-crystallization or slow diffusion under strong electric fields can be rate determining. In the fourth part, the major device characteristics of ECM cells are explained. Emphasis is placed on switching speed, forming and SET/RESET voltage, R_(ON) to R_(OFF) ratio, endurance and retention, and scaling potentials. In the last part, circuit design aspects of ECM arrays are discussed, including the pros and cons of active and passive arrays. In the case of passive arrays, the fundamental sneak path problem is described and as well as a possible solution by two anti-serial (complementary) interconnected resistive switches per cell. Furthermore, the prospects of ECM with regard to further scalability and the ability for multi-bit data storage are addressed.
机译：这篇综述着重于电化学金属化存储单元（ECM），强调了它们作为下一代存储器的优势。简要介绍了ECM电池的基本切换机制，并概述了其历史发展。在第二部分中，介绍了用于存储设备原型和专门研究的材料和材料组合的完整光谱。在第三部分中，描述了纳米电化学电池的特定热力学和动力学。发现空间电荷层的重叠与静止时的电池性能最相关。决定ECM电池功能的主要因素是电极反应和运输动力学。取决于电极和/或电解质材料的电子转移，在强电场下的电结晶或缓慢扩散可以决定速率。在第四部分中，说明了ECM电池的主要设备特性。重点放在开关速度，形成和SET / RESET电压，R_（ON）与R_（OFF）之比，耐用性和保持力以及缩放电位上。在最后一部分中，讨论了ECM阵列的电路设计方面，包括有源和无源阵列的优缺点。在无源阵列的情况下，将描述基本的潜行路径问题以及每个单元通过两个反串行（互补）互连电阻开关的可能解决方案。此外，解决了ECM在进一步扩展性和多位数据存储能力方面的前景。

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