Graphene on Si(111)7×7

Ochedowski O.; Begall G.; Scheuschner N.; El Kharrazi M.; Maultzsch J.; Schleberger M.

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Graphene on Si(111)7×7

机译：Si（111）7×7上的石墨烯

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We demonstrate that it is possible to mechanically exfoliate graphene under ultrahigh vacuum conditions on the atomically well defined surface of single crystalline silicon. The flakes are several hundred nanometers in lateral size and their optical contrast is very faint, in agreement with calculated data. Single-layer graphene is investigated by Raman mapping. The graphene and 2D peaks are shifted and narrowed compared to undoped graphene. With spatially resolved Kelvin probe measurements we show that this is due to p-type doping with hole densities of n _h6×10 ~(12)cm ~2. The in vacuo preparation technique presented here should open up new possibilities to influence the properties of graphene by introducing adsorbates in a controlled way.

机译：我们证明有可能在超高真空条件下在单晶硅的原子清晰定义的表面上机械剥离石墨烯。薄片的横向尺寸为几百纳米，其光学对比度非常微弱，与计算得出的数据一致。通过拉曼映射研究单层石墨烯。与未掺杂的石墨烯相比，石墨烯和2D峰移动并变窄。通过空间分辨开尔文探针测量，我们证明这是由于p型掺杂所致，空穴密度为n _h6×10〜（12）cm〜2。本文介绍的真空制备技术应开辟新的可能性，即通过以受控方式引入吸附物来影响石墨烯的性能。

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《Nanotechnology》 |2012年第40期|共7页
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Ochedowski O.; Begall G.; Scheuschner N.; El Kharrazi M.; Maultzsch J.; Schleberger M.;
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1. Atomic and electronic structure of graphene/Sn-Ni(111) and graphene/Sn-Cu(111) surface alloy interfaces [J] . Adamska L., Addou R., Batzill M., Applied Physics Letters . 2012,第5期

机译：石墨烯/ Sn-Ni（111）和石墨烯/ Sn-Cu（111）表面合金界面的原子和电子结构
2. Graphene/SiC interface control using propane-hydrogen CVD on 6H-SiC(0001) and 3C-SiC(111)/Si(111) [J] . A. Michon, E. Roudon, M. Portail, Materials science forum . 2012,第期

机译：在6H-SiC（0001）和3C-SiC（111）/ Si（111）上使用丙烷-氢CVD进行石墨烯/ SiC界面控制
3. High-quality graphene on single crystal Ir(111) films on Si(111) wafers: Synthesis and multi-spectroscopic characterization [J] . C. Struzzi, N.I. Verbitskiy, A.V. Fedorov Carbon: An International Journal Sponsored by the American Carbon Society . 2015,第Null期

机译：Si（111）晶片上的单晶Ir（111）膜上的高质量石墨烯：合成和多光谱表征
4. Graphene/SiC interface control using propane-hydrogen CVD on 6H-SiC(0001) and 3C-SiC(111)/Si(111) [C] . A. Michon, E. Roudon, M. Portail, HeteroSiC WASMPE 2011 . 2012

机译：石墨烯/ SiC界面控制在6H-SiC（0001）和3C-SiC（111）/ Si（111）上使用丙烷 - 氢CVD
5. In situ Microscopy Studies of Growth Kinetics of Monolayer Graphene on Pd(111). [D] . Mok, Hoi Sing. 2013

机译：单层石墨烯在Pd（111）上生长动力学的原位显微镜研究。
6. Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111) [O] . Shunsuke Abe, Hiroyuki Handa, Ryota Takahashi, 2010

机译：3C-SiC（111）/ Si（111）上涉及石墨烯外延的表面化学
7. Effect of substrate polishing on the growth of graphene on 3C–SiC(111)/Si(111) by high temperature annealing [O] . Gupta B., Di Bernardo I., Mondelli P., 2016

机译：高温退火对衬底抛光对3C–SiC（111）/ Si（111）上石墨烯生长的影响

Graphene on Si(111)7×7

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