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Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene

机译：基于MoS2和石墨烯单原子层的柔性集成电路和多功能电子产品

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Two-dimensional materials, such as graphene and its analogues, have been investigated by numerous researchers for high performance flexible and conformal electronic systems, because they offer the ultimate level of thickness scaling, atomically smooth surfaces and high crystalline quality. Here, we use layer-by-layer transfer of large area molybdenum disulphide (MoS2) and graphene grown by chemical vapor deposition (CVD) to demonstrate electronics on flexible polyimide (PI) substrates. On the same PI substrate, we are able to simultaneously fabricate MoS2 based logic, non-volatile memory cells with graphene floating gates, photo-detectors and MoS2 transistors with tunable source and drain contacts. We are also able to demonstrate that these flexible heterostructure devices have very high electronic performance, comparable to four point measurements taken on SiO2 substrates, with on/off ratios > 10(7) and field effect mobilities as high as 16.4 cm(2) V-1 s(-1). Additionally, the heterojunctions show high optoelectronic sensitivity and were operated as photodetectors with responsivities over 30 AW(-1). Through local gating of the individual graphene/MoS2 contacts, we are able to tune the contact resistance over the range of 322-1210 ohm mm for each contact, by modulating the graphene work function. This leads to devices with tunable and multifunctional performance that can be implemented in a conformable platform.
机译：二维材料（例如石墨烯及其类似物）已被众多研究人员研究用于高性能柔性和共形电子系统，因为它们可以提供极高的厚度缩放比例，原子​​光滑的表面和高结晶质量。在这里，我们使用大面积的二硫化钼（MoS2）和通过化学气相沉积（CVD）生长的石墨烯的逐层转移来演示柔性聚酰亚胺（PI）基板上的电子器件。在同一个PI基板上，我们能够同时制造基于MoS2的逻辑，具有石墨烯浮栅的非易失性存储单元，光电探测器以及具有可调源极和漏极触点的MoS2晶体管。我们还能够证明这些柔性异质结构器件具有非常高的电子性能，可与在SiO2衬底上进行的四点测量相媲美，其开/关比> 10（7），场效应迁移率高达16.4 cm（2）V -1秒（-1）。此外，异质结显示出高的光电灵敏度，并被用作具有超过30 AW（-1）的响应度的光电探测器。通过单个石墨烯/ MoS2触点的局部门控，我们能够通过调制石墨烯功函数在每个触点的322-1210 ohm mm范围内调整接触电阻。这导致可以在一致的平台中实现具有可调和多功能性能的设备。

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