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首页> 外文期刊>RSC Advances >High-performance photodetectors based on bandgap engineered novel layer GaSe0.5Te0.5 nanoflakes
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High-performance photodetectors based on bandgap engineered novel layer GaSe0.5Te0.5 nanoflakes

机译：基于带隙工程设计的新型GaSe0.5Te0.5纳米薄片的高性能光电探测器

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摘要

Layered two-dimensional (2D) gallium monochalcogenide (GaX, X = S, Se, Te) semiconductor crystals hold great promise for potential electronics and photonics application. In this paper, we reported the optoelectronic properties of 2D bandgap engineered GaSe0.5Te0.5 nanoflakes. The GaSe0.5Te0.5 nanoflakes were synthesized by chemical vapor deposition (CVD) and characterized by XRD, SEM, TEM, XPS, Raman and PL spectra, which demonstrate the high crystal quality of as-prepared nanoflakes. The photodetector based on single GaSe0.5Te0.5 nanoflake shows fast response time, high reversibility and stability both in air and vacuum. The photo-responsivity is up to 22 A W-1 under illumination of 532 nm light. More interesting, the GaSe0.5Te0.5 nanoflake photodetector demonstrate extended light response range, as compared with pure GaSe. The photo-responsivity is 13 A W-1 for 650 nm red light. The present results suggest strongly that the bandgap engineered 2D GaSe0.5Te0.5 nanoflakes hold extensive applications in next-generation photodetection and photosensing nanodevices.
机译：层状二维（2D）镓硫族化物（GaX，X = S，Se，Te）半导体晶体对于潜在的电子和光子学应用具有广阔的前景。在本文中，我们报道了二维带隙工程化GaSe0.5Te0.5纳米薄片的光电性能。 GaSe0.5Te0.5纳米薄片是通过化学气相沉积（CVD）合成的，并通过XRD，SEM，TEM，XPS，拉曼和PL光谱进行了表征，证明了所制备纳米薄片的高晶体质量。基于单个GaSe0.5Te0.5纳米片的光电探测器显示出快速响应时间，高可逆性以及在空气和真空中的稳定性。在532 nm的光照下，光响应度高达22 A W-1。更有趣的是，与纯GaSe相比，GaSe0.5Te0.5纳米片状光电检测器显示出更大的光响应范围。 650 nm红光的光敏度为13 A W-1。目前的结果强烈表明，带隙工程设计的2D GaSe0.5Te0.5纳米薄片在下一代光电检测和光敏纳米器件中拥有广泛的应用。

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