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首页> 外文期刊>Optics Letters >Dark current suppression of MgZnO metal-semiconductor-metal solar-blind ultraviolet photodetector by asymmetric electrode structures
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Dark current suppression of MgZnO metal-semiconductor-metal solar-blind ultraviolet photodetector by asymmetric electrode structures

机译：非对称电极结构抑制MgZnO金属-半导体-金属日盲紫外光探测器的暗电流

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摘要

The application of asymmetric Schottky barrier and electrode area in an MgZnO metal-semiconductor-metal (MSM) solar-blind ultraviolet photodetector has been investigated by a physical-based numerical model in which the electron mobility is obtained by an ensemble Monte Carlo simulation combined with first principle calculations using the density functional theory. Compared with the experimental data of symmetric and asymmetric MSM structures based on ZnO substrate, the validity of this model is verified. The asymmetric Schottky barrier and electrode area devices exhibit reductions of 20 times and 1.3 times on dark current, respectively, without apparent photocurrent scarification. The plots of photo-to-dark current ratio (PDR) indicate that the asymmetric MgZnO MSM structure has better dark current characteristic than that of the symmetric one.
机译：通过基于物理的数值模型研究了非对称肖特基势垒和电极面积在MgZnO金属-半导体-金属（MSM）太阳盲紫外光电探测器中的应用，该模型通过集成Monte Carlo模拟与第一原理使用密度泛函理论进行计算。通过与基于ZnO衬底的对称和不对称MSM结构的实验数据比较，验证了该模型的有效性。不对称的肖特基势垒和电极面积器件在暗电流下分别减小了20倍和1.3倍，而没有明显的光电流划痕。光暗电流比（PDR）图表明，不对称的MgZnO MSM结构具有比对称结构更好的暗电流特性。

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