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首页> 外文期刊>Optics Letters >Optically pumped 1.3 mu m room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon
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Optically pumped 1.3 mu m room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon

机译:直接生长在(001)硅上的光泵浦1.3μm室温InAs量子点微盘激光器

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摘要

Direct integration of high-performance laser diodes on silicon will dramatically transform the world of photonics, expediting the progress toward low-cost and compact photonic integrated circuits (PICs) on the mainstream silicon platform. Here, we report, to the best of our knowledge, the first 1.3 mu m room-temperature continuous-wave InAs quantum-dot micro-disk lasers epitaxially grown on industrial-compatible Si (001) substrates without offcut. The lasing threshold is as low as hundreds of microwatts, similar to the thresholds of identical lasers grown on a GaAs substrate. The heteroepitaxial structure employed here does not require the use of an absorptive germanium buffer and/or dislocation filter layers, both of which impede the efficient coupling of light from the laser active regions to silicon waveguides. This allows for full compatibility with the extensive silicon-on-insulator (SOI) technology. The large-area virtual GaAs (on Si) substrates can be directly adopted in various mature in-plane laser configurations, both optically and electrically. Thus, this demonstration represents a major advancement toward the commercial success of fully integrated silicon photonics. (C) 2016 Optical Society of America
机译:将高性能激光二极管直接集成到硅上将极大地改变光子学的世界,加快主流硅平台上向低成本,紧凑型光子集成电路(PIC)的发展。在此,据我们所知,在工业兼容的Si(001)衬底上外延生长的第一批1.3μm室温连续波InAs量子点微盘激光器没有下陷。激射阈值低至数百微瓦,类似于在GaAs衬底上生长的相同激光器的阈值。此处采用的异质外延结构不需要使用吸收性锗缓冲层和/或位错滤光层,这两者都阻碍了从激光有源区到硅波导的有效光耦合。这样就可以与广泛的绝缘体上硅(SOI)技术完全兼容。大面积虚拟GaAs(Si上)基板可直接用于各种成熟的平面和激光光学和电平面激光器配置中。因此,该演示代表了全集成硅光子学在商业成功方面的重大进步。 (C)2016美国眼镜学会

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