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The hidden secrets of the E-center in Si and Ge

机译：Si和Ge中电子中心的隐藏秘密

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摘要

The group- V vacancy pair, the so-called E-center, has recently been demonstrated to have, both in Si and Ge, more complicated energy-level schemes in the energy gap than were previously assumed. The E-center in silicon has, in addition to its well-established single-acceptor level in the upper half of the band gap, also a donor level in the lower half of the band gap; this donor level has lain hidden for more than 40 years. The E-center in Ge has an even more complicated level scheme as it induces, in addition to two levels analogous to those found in Si, also a double-acceptor level in the upper half of the band gap. Thus the E-center in Si can exist in three charge states and the E-center in Ge in four. (C) 2007 Elsevier B.V. All rights reserved.
机译：V族空缺对，即所谓的E中心，最近被证明在Si和Ge中在能隙中具有比以前设想的更复杂的能级方案。硅中的E中心除了在带隙的上半部具有公认的单受体能级外，在带隙的下半部还具有供体能级。这个捐助者的水平已经隐藏了40多年。 Ge中的E中心具有甚至更复杂的能级方案，因为它除了诱发类似于Si中的两个能级之外，还会在带隙的上半部产生双受主能级。因此，Si中的E中心可以存在三个电荷状态，Ge中的E中心可以存在四个电荷状态。 （C）2007 Elsevier B.V.保留所有权利。

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