The temperature dependent Hall effect and resistivity measurements of Si δ-doped GaAs are performedin a temperature range of 25-300 K. The temperature dependence of carrier concentration shows acharacteristic minimum at about 200 K, which indicates a transition from the conduction bandconduction to the impurity band conduction. The temperature dependence of the conductivity resultsare in agreement with terms due to conduction band conduction and localized state hoppingconduction in the impurity band. It is found that the transport properties of Si 6-doped GaAs are mainlygoverned by the dislocation scattering mechanism at high temperatures. On the other hand, theconductivity follows the Mott variable range hopping conduction (VRH) at low temperatures in thestudied structures.
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