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Effects of different ions implantation on yellow luminescence from GaN

机译：不同离子注入对GaN黄色发光的影响

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The influence of C, N, O, Mg, Si and co-implants (Mg + Si) ions implantation with fluences in the wide range 10(13)-10(17) cm(-2) on the yellow luminescence (YL) properties of wurtzite GaN has been studied by photoluminescence (PL) spectroscopy. Two types of n-type GaN samples grown by metal-organic chemical vapor deposition method (MOCVD) and labeled as No-1 and No-2 were studied. In their as-grown states, No-1 samples had strong YL, while No-2 samples had weak YL. Results of the frontside and backside PL measurements in one of the as-grown GaN epifilms are also presented. Comparing the intensity of YL between frontside and backside PL spectra, the backside PL spectrum shows the more intense YL intensity. This implies that most of the intrinsic defects giving rise to YL exist mainly near the interface between the epilayer and buffer layer. Our experimental results show that the intensity ratio of YL to near-band-edge UV emission (I-YL/I-UV) decreases gradually by increasing the C implantation fluence from 10(13) to 10(16) cm(-2) for No-1 samples after annealing at 900 degrees C. When the fluence is 10(17) cm(-2), a distinct change of the I-YL/I-UV is observed, which is strongly increased after annealing. For No-2 samples, after annealing the I-YL/I-UV decreases gradually with increase in the C implantation fluence from 10(13) to 10(15) cm(-2). The I-YL/I-UV is gradually increased with increasing C fluence from 10(16) to 10(17) cm(-2) after annealing, while I-YL/I-UV for other ions-implanted GaN samples decreases monotonically with increase in the ions implantation fluences from 10(13) to 10(17) cm(-2) for both No-1 samples and No-2 samples. It is noted that for annealed C-implanted No-2 samples I-YL/I-UV is much higher than that of the as-grown one and other ion-implanted ones. In addition, I-YL/I-UV for the Mg, Si, and co-implants (Mg + Si) implanted No-2 samples with a fluence of 10(13) cm(-2) after being annealed at 900 degrees C is higher than that of the as-grown one. Based on our experimental data and literature results reported previously, the origins of the YL band have been discussed. (C) 2008 Elsevier B.V. All rights reserved.
机译：C，N，O，Mg，Si和共注入（Mg + Si）离子注入在10（13）-10（17）cm（-2）的宽范围内对黄色发光（YL）的影响通过光致发光（PL）光谱研究了纤锌矿型GaN的特性。研究了两种通过金属有机化学气相沉积法（MOCVD）生长的n型GaN样品，分别标记为No-1和No-2。在其成长期状态下，No-1样品具有强YL，而No-2样品具有弱YL。还显示了其中一种生长的GaN外延膜的正面和背面PL测量结果。比较正面PL光谱和背面PL光谱之间的YL强度，背面PL光谱显示出更强的YL强度。这意味着大多数产生YL的固有缺陷主要存在于外延层和缓冲层之间的界面附近。我们的实验结果表明，通过将C注入量从10（13）cm增加到10（16）cm（-2），YL与近带边缘UV发射的强度比（I-YL / I-UV）逐渐减小对于900℃退火后的No-1样品。当注量为10（17）cm（-2）时，观察到I-YL / I-UV的明显变化，退火后该变化显着增加。对于No-2样品，退火后I-YL / I-UV随着C注入通量的增加而逐渐减小，从10（13）到10（15）cm（-2）。退火后，随着C流量从10（16）到10（17）cm（-2），I-YL / I-UV逐渐增加，而其他离子注入的GaN样品的I-YL / I-UV单调减少对于No-1样品和No-2样品，离子注入通量从10（13）cm（-2）增加到10（17）cm（-2）。值得注意的是，对于退火的C注入的No-2样品，I-YL / I-UV远远高于生长中的一个离子注入样品和其他离子注入样品。另外，用于Mg，Si和共植入物（Mg + Si）的I-YL / I-UV在900℃退火后，注入了注量为10（13）cm（-2）的No-2样品。比成年的高。根据我们的实验数据和先前报道的文献结果，对YL谱带的起源进行了讨论。 （C）2008 Elsevier B.V.保留所有权利。

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