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Peculiarities of Tamm states formed in degenerate photonic band gaps

机译：Tamm态的特质在简并的光子带隙中形成

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摘要

The structure of the Tamm state localized at the interface between anisotropic magnetophotonic crystal (anisotropic MPC) and a photonic crystal (PC) made of isotropic dielectrics is studied. It is shown that if the frequency of this state appears within the degenerate band gap then its structure qualitatively differs from the structure of a well-known Tamm state localized at the interface between two one-dimensional PC made of isotropic materials. Since inside the degenerate BG the real part of the Bloch wavenumber differs from the Brillouin value, two Bloch waves with different signs in the real part of the wavenumber and the same sign in the imaginary part have different input impedance values. Moreover, contrary to the case of a PC made of isotropic materials the impedance of each Bloch wave is a tensor. As a consequence to construct a surface state at least three evanescent Bloch waves are required. The conditions that determine the Tamm state frequency also change.
机译：研究了各向异性磁光子晶体（各向异性MPC）和由各向同性电介质制成的光子晶体（PC）之间的界面上Tamm态的结构。结果表明，如果这种状态的频率出现在简并的带隙内，则其结构在质量上不同于定位在由各向同性材料制成的两个一维PC之间的界面上的众所周知的Tamm态的结构。由于在退化BG内，Bloch波数的实部与布里渊值不同，因此，两个Bloch波在波数的实部中具有不同的符号，在虚部中具有相同的符号具有不同的输入阻抗值。而且，与由各向同性材料制成的PC的情况相反，每个Bloch波的阻抗都是张量。结果，构造表面状态至少需要三个least逝布洛赫波。确定Tamm状态频率的条件也会改变。

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