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首页> 外文期刊>Physica, B. Condensed Matter >Bandgap changes in excited intrinsic (heavily doped) Si and Ge semiconductors
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Bandgap changes in excited intrinsic (heavily doped) Si and Ge semiconductors

机译：激发的本征（重掺杂）Si和Ge半导体的带隙变化

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摘要

Our results for the bandgap changes in highly excited intrinsic (heavily doped-HD) Si (Ge) for any majority-carrier density N and temperature T have been investigated and expressed in terms of (i) the bandgap narrowing (BGN > 0) due to many-body carrier-carrier interactions and screening effect on carrier-impurity (or electron-hole) potential energies, (ii) the bandgap widening (BGW < 0) due to the effects of Fermi Dirac statistics, and (iii) the apparent BGN defined by ABGN BGN+BGW < BGN. Since those ABGN and BGN can be extracted from respective electical-and-optical measurements, this relation thus suggests a conjunction between electrical-and-optical bandgaps (EBG-and-OBG). Then, our results for BGN, ABGN, OBG, and EBG have been computed and also compared with other theoretical and experimental ones, giving rise to a satisfactory description of both electrical-and-optical data in those materials. Furthermore, in the p-type HD base of Si1-xGex hetero bipolar transistors for x <= 0.3, using a same assumption taken by Eberhardt and Kasper (EK) [Mater. Sci. Eng. B 89 (2002) 93-96], we have obtained the results for ABGN and EBG, which are found to be in good accordance with the respective EK-ones.
机译：我们针对任意多数载流子密度N和温度T的高激发本征（重掺杂HD）Si（Ge）带隙变化的结果进行了研究，并表示为（i）由于带隙变窄（BGN> 0）多体载流子与载流子之间的相互作用以及对载流子杂质（或电子空穴）势能的屏蔽作用;（ii）由于费米·狄拉克统计的影响，带隙变宽（BGW <0），以及由ABGN定义的BGN BGN + BGW

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