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首页> 外文期刊>Physica, B. Condensed Matter >Ultrasonic attenuation of CdSe at low temperatures
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Ultrasonic attenuation of CdSe at low temperatures

机译：低温下CdSe的超声衰减

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摘要

The ultrasonic attenuation of a single crystal of CdSe has been investigated over the temperature range from 1.2 to 300 K at frequencies of 10, 30 and 90 MHz. We report here the temperature dependence of the attenuation in the range 1.2-30 K for piezoactive and non-piezoactive acoustic waves. A temperature-induced relaxation for two piezoactive waves, which scale with frequency towards higher temperatures, was found. A modified Hutson and White model with a new parameter g is proposed to explain the relaxation maxima of our data and others in the literature. In this model the parameter g, which seems to be closely related to the compensation, takes into account the impurities-sound wave piezoelectric coupling. By inverting the proposed expression for the sound attenuation to obtain the electrical conductivity from the relaxation, it is found that impurity conductivity of the hopping type is the dominant conduction process at low temperatures.
机译：已经研究了CdSe单晶在10、30和90 MHz频率下在1.2至300 K的温度范围内的超声衰减。我们在这里报告了压电和非压电声波在1.2-30 K范围内衰减的温度依赖性。发现了两个压电波的温度引起的弛豫，它们随频率朝着更高的温度扩展。提出了具有新参数g的改进型Hutson and White模型，以解释我们的数据和文献中的其他数据的弛豫最大值。在该模型中，似乎与补偿密切相关的参数g考虑了杂质-声波压电耦合。通过将所提出的声音衰减表达式进行反演，以从弛豫中获得电导率，发现跳变类型的杂质电导率是低温下的主要传导过程。

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