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首页> 外文期刊>Physica, B. Condensed Matter >Annealing temperature effect on the structural, optical and electrical properties of ZnS thin films
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Annealing temperature effect on the structural, optical and electrical properties of ZnS thin films

机译：退火温度对ZnS薄膜结构，光学和电学性质的影响

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摘要

Zinc sulfide thin films were prepared on glass substrates at room temperature using a chemical bath deposition method. The obtained films were annealed at temperatures ranging from 100 to 500 °C in steps of 100 °C for 1 h. The films were characterized by X-ray diffraction (XRD), Raman spectroscopy, energy dispersive X-ray analysis (EDX), optical absorption spectra, and electrical measurements. X-ray diffraction analysis indicates that the deposited films have an amorphous structure, but after being annealed at 500 °C, they change to slightly polycrystalline. The optical constants such as the refractive index (n_r), the extinction coefficient (k), and the real (ε_1) and imaginary (ε_2) parts of the dielectric constant are calculated depending on the annealing temperature. Aside from the ohmic characteristics of the IV curve, a nonlinear IV curve owing to the Schottky contact is also found, and the barrier heights (φ_(bn)) for Au-ZnS and In-ZnS heterojunctions are calculated. The conductivity type was identified by the hot-probe technique.
机译：使用化学浴沉积法在室温下在玻璃基板上制备硫化锌薄膜。将获得的薄膜在100到500摄氏度的温度范围内以100摄氏度的步幅退火1小时。通过X射线衍射（XRD），拉曼光谱，能量色散X射线分析（EDX），光学吸收光谱和电学测量来表征薄膜。 X射线衍射分析表明，沉积的膜具有非晶结构，但是在500℃下退火后，它们变为微多晶。根据退火温度计算出光学常数，例如折射率（n_r），消光系数（k）以及介电常数的实部（ε_1）和虚部（ε_2）。除了IV曲线的欧姆特性外，还发现了由于肖特基接触引起的非线性IV曲线，并计算了Au / n-ZnS和In / n-ZnS异质结的势垒高度（φ_（bn））。通过热探针技术识别导电类型。

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