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Effect of la doping on the electronic structure and optical properties of ZnO

机译:La掺杂对ZnO电子结构和光学性能的影响

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The electronic structure and optical properties of ZnO doped with La have been investigated using density functional theory based on first-principles ultrasoft pseudopotential method. The calculated results show that the La doping increases the bandgap of ZnO, in agreement with the experimental results; while the Fermi level shifts into the conduction band, revealing the so-called Burstein-Moss effect. In comparison to pure ZnO, a new peak appears in the imaginary part of dielectric function in the system doped with La and the optical absorption edge has been obviously changed. Moreover, the covalent property of Zn_(1-x)La_xO is found to weaken with the increase of La concentration.
机译:利用基于第一性原理的超软pseudo势方法的密度泛函理论研究了掺La的ZnO的电子结构和光学性质。计算结果表明,La掺杂增加了ZnO的带隙,与实验结果吻合。而费米能级移入导带,揭示了所谓的布尔斯坦-莫斯效应。与纯ZnO相比,在掺La的体系中,介电函数的虚部出现一个新的峰,光吸收边缘发生了明显变化。而且,发现Zn_(1-x)La_xO的共价特性随着La浓度的增加而减弱。

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