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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Effect of Si Doping and Porosity on Hematite's (α-Fe2O3) Photoelectrochemical Water Oxidation Performance
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Effect of Si Doping and Porosity on Hematite's (α-Fe2O3) Photoelectrochemical Water Oxidation Performance

机译：硅掺杂和孔隙率对赤铁矿（α-Fe2O3）光电化学水氧化性能的影响

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摘要

The photoelectrochemical water oxidation performance under simulated solar irradiation of hematite (α-Fe2O3) films synthesized by coevaporation of pure Si and Fe in an oxygen ambient, a process known as reactive ballistic deposition, is studied as a function of Si doping level and film porosity, ranging from dense films to nanocolumnar films. It is found that Si segregates to the hematite surface, does not improve the bulk conductivity, and lowers the optical absorption coefficient. Nevertheless, the photoelectrochemical performance of Si-doped, porous films is significantly improved relative to undoped, porous films. However, the improvement relative to dense, un doped films is marginal. It is concluded that Si acts to passivate the hematite surface and aids charge transfer to the solution. Additionally, from incident photon conversion efficiency measurements it is found that Si doping and porosity have little effect on the normalized spectral response of 100 nm thick hematite films.
机译：研究了纯硅和铁在氧气环境中共蒸发合成的赤铁矿（α-Fe2O3）薄膜在模拟太阳辐射下的光电化学水氧化性能，该过程被称为反应弹道沉积，该过程与硅掺杂水平和薄膜孔隙率有关，范围从致密膜到纳米柱膜。发现Si偏析到赤铁矿表面，没有改善体导电率，并且降低了光吸收系数。然而，与未掺杂的多孔膜相比，掺杂硅的多孔膜的光电化学性能得到了显着改善。然而，相对于致密的，未掺杂的膜而言，改进是微不足道的。结论是，硅起到钝化赤铁矿表面的作用，并有助于电荷转移到溶液中。另外，从入射光子转换效率的测量结果中发现，Si掺杂和孔隙率对100 nm厚赤铁矿薄膜的归一化光谱响应影响很小。

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