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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >ac conductivity and dielectric properties of amorphous Se_(80)Te_(20-x)Ge_x chalcogenide glass film compositions
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ac conductivity and dielectric properties of amorphous Se_(80)Te_(20-x)Ge_x chalcogenide glass film compositions

机译：非晶态Se_（80）Te_（20-x）Ge_x硫族化物玻璃薄膜组合物的ac电导率和介电性能

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摘要

Thin films of the prepared Se_(80)Te_(20-x)Ge_x (x = 5, 7 and 10 at. percent) were prepared by thermal evaporation technique. X-ray diffraction patterns showed that the films were in amorphous state. The ac conductivity and dielectric properties of the investigated film compositions were studied in the frequency range 0.1-100 kHz and in temperature range (303-373 K). The experimental results indicated that the ac conductivity and the dielectric properties depended on the temperature and frequency. The ac conductivity is found to obey the of law, in accordance with the hopping model, s is found to be temperature dependent (s < 1) and its value goes down as the temperature is increased. The temperature dependence of ac conductivity can be reasonably interpreted in terms of the correlated barrier hopping (CBH) model. Values of dielectric constant epsilon_1 and dielectric loss epsilon_2 were found to decrease with frequency and increase with temperature. The maximum barrier height W_m, calculated from dielectric measurements according to Guintini equation, agrees with that proposed by the theory of hopping over potential barrier as suggested by Elliott in case of chalcogenide glasses. The density of localized states was estimated for the studied film compositions. The variation of the studied properties with Ge content was also investigated.
机译：通过热蒸发技术制备制备的Se_（80）Te_（20-x）Ge_x（x ＝ 5、7和10原子％）的薄膜。 X射线衍射图表明该膜处于非晶态。在0.1-100 kHz的频率范围和温度范围（303-373 K）中研究了所研究的薄膜组合物的交流电导率和介电性能。实验结果表明，交流电导率和介电性能取决于温度和频率。根据跳跃模型，发现交流电导率符合定律，发现s与温度有关（s <1），并且其值随温度升高而降低。可以根据相关势垒跳跃（CBH）模型合理地解释交流电导率的温度依赖性。发现介电常数epsilon_1和介电损耗epsilon_2的值随频率降低而随温度升高。根据Guintini方程从电介质测量值计算得出的最大势垒高度W_m与Elliott提出的关于硫族化物玻璃的跃迁势垒理论所建议的最大势垒高度W_m一致。对于所研究的膜组合物，估计了局部态的密度。还研究了所研究性质随Ge含量的变化。

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