...
【24h】

Sn_xS_y compounds growth by controlled sulfurisation of SnO_2

机译:通过控制SnO_2硫化,Sn_xS_y化合物的生长

获取原文
获取原文并翻译 | 示例
           

摘要

In this work, thin layers of semiconducting tin sulfide Sn_xS_y compounds have been prepared by sulfri-sation of tin oxide SnO_2 on glass substrate. Structural studies showed that, depending on sulfur supply concentration, a mixture of SnS_2 and Sn_2S_3 is obtained at an annealing temperature of 550 °C for 2 h. From the transmission and reflectance spectra, the extinction coefficient and refractive index were calculated as guides to understanding crystal growth kinetics. On the other hand, the exploitation of these optical measurements along with optothermal investigations showed that the electronic transitions in these layers were of allowed direct type and exhibit two gaps indicating the presence of two competent sulfide phases: SnS_2 and Sn_2S_3.
机译:在这项工作中,已经通过在玻璃基板上硫化氧化锡SnO_2制备了半导体硫化锡Sn_xS_y化合物的薄层。结构研究表明,根据硫的供应浓度,在550°C的退火温度下2 h获得SnS_2和Sn_2S_3的混合物。从透射和反射光谱,计算出消光系数和折射率,作为了解晶体生长动力学的指南。另一方面,利用这些光学测量结果以及光热研究表明,这些层中的电子跃迁属于直接类型,并表现出两个间隙,表明存在两个有效的硫化物相:SnS_2和Sn_2S_3。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号