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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >The effect of sintering temperature on some properties of Cu-SiC composite
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The effect of sintering temperature on some properties of Cu-SiC composite

机译：烧结温度对Cu-SiC复合材料某些性能的影响

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摘要

Copper matrix composites reinforced with 1 wt.%, 2 wt.%, 3 wt.% and 5 wt.% SiC particles were fabricated by powder metallurgy method. Cu and Cu-SiC powder mixtures were compacted with a compressive force of 280MPa and sintered in an open atmospheric furnace at 900-950°C for 2 h. Within the furnace compacted samples were embedding into the graphite powder. The presence of Cu and SiC components in composites was verified by XRD analysis. Optical and SEM studies showed that Cu-SiC composites have a uniform microstructure in which silicon carbide particles are distributed uniformly in the copper matrix. The results of the study on mechanical and electrical conductivity properties of Cu-SiC composites indicated that with increasing SiC content (wt.%), hardness increased, but relative density and electrical conductivity decreased. The highest electrical conductivity of 98.8% IACS and relative density of 98.2% were obtained for the Cu-1 wt.%SiC composite sintered at 900 °C and this temperature was defined as the optimum sintering temperature.
机译：通过粉末冶金法制备了以1重量％，2重量％，3重量％和5重量％的SiC颗粒增强的铜基复合材料。将铜和铜-碳化硅粉末混合物以280MPa的压缩力压实，并在开放式常压炉中于900-950°C烧结2小时。在炉内，将压实的样品嵌入石墨粉中。通过XRD分析验证了复合材料中Cu和SiC成分的存在。光学和SEM研究表明，Cu-SiC复合材料具有均匀的微观结构，其中碳化硅颗粒均匀地分布在铜基质中。 Cu-SiC复合材料的机械和导电性能的研究结果表明，随着SiC含量（wt。％）的增加，硬度增加，但相对密度和导电率降低。对于在900°C烧结的Cu-1 wt。％SiC复合材料，其最高电导率为98.8％IACS，相对密度为98.2％，该温度被定义为最佳烧结温度。

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