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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Enhanced capacitance ratio and low minimum capacitance of varactor devices based on depletion-mode Ga-doped ZnO TFTs with a drain-offset structure
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Enhanced capacitance ratio and low minimum capacitance of varactor devices based on depletion-mode Ga-doped ZnO TFTs with a drain-offset structure

机译：基于具有漏极偏移结构的耗尽型Ga掺杂ZnO TFT，变容二极管器件的电容比提高且最小最小电容降低

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摘要

Depletion-mode Ga-doped ZnO thin-film transistors(TFTs) with a drain-offset configuration were fabricated employing a plasma-enhanced chemical vapour deposited Si _3N _4 gate insulator and a metal organic chemical vapour deposition grown Ga-doped ZnO channel layer. For comparison, conventional TFTs with drain-to-gate overlap were also fabricated. Capacitance-voltage characteristics of gate-to-drain capacitors and current-voltage characteristics of TFTs were measured. Although drain-offset TFTs exhibit poor device characteristics compared with conventional TFTs, these TFTs show better C _(max)/C _(min) ratio and C _(min) values. The C _(max)/C _(min) ratio is as large as 71.83 and C _(min) is as small as 0.3fFm ~1 normalized for channel width, demonstrating the potential of these devices as varactors for circuit applications. Their better varactor performance is ascribed to the presence of a very small capacitance in the drain-offset region. The effect of drain-offset length variation on TFT and gate-to-drain capacitor performance is also reported.
机译：利用等离子体增强化学气相沉积Si _3N _4栅极绝缘体和金属有机化学气相沉积生长的Ga掺杂ZnO沟道层，制造了具有漏极偏移配置的耗尽型Ga掺杂ZnO薄膜晶体管（TFT）。为了比较，还制造了具有漏极-栅极重叠的传统TFT。测量栅漏电容器的电容电压特性和TFT的电流电压特性。尽管与传统的TFT相比，漏极偏移TFT的器件特性差，但是这些TFT的C_（max）/ C_（min）比和C_（min）值更好。 C_（max）/ C_（min）之比大至71.83，而C_（min）小至0.3fFm〜1（针对沟道宽度归一化），证明了这些器件作为电路应用中的变容二极管的潜力。其更好的变容二极管性能归因于漏极偏移区域中存在非常小的电容。还报告了漏极偏移长度变化对TFT和栅极至漏极电容器性能的影响。

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