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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Interface engineered HfO2-based 3D vertical ReRAM
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Interface engineered HfO2-based 3D vertical ReRAM

机译：基于界面工程的基于HfO2的3D垂直ReRAM

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摘要

We demonstrate a double-layer 3D vertical resistive random access memory (ReRAM) stack implementing a Pt/HfO2/TiN memory cell. The HfO2 switching layer is grown by atomic layer deposition on the sidewall of a SiO2/TiN/SiO2/TiN/SiO2 multilayer pillar. A steep vertical profile was achieved using CMOS-compatible TiN dry etching. We employ in situ TiN bottom interface engineering by ozone, which results in (a) significant forming voltage reduction which allows for forming-free operation in AC pulsed mode, and (b) non-linearity tuning of low resistance state by current compliance during Set operation. The vertical ReRAM shows excellent read and write disturb immunity between vertically stacked cells, retention over 10(4) s and excellent switching stability at 400 K. Endurance of 10(7) write cycles was achieved using 100 ns wide AC pulses while fast switching speed using pulses of only 10 ns width is also demonstrated. The active switching region was evaluated to be located closer to the bottom interface which allows for the observed high endurance.
机译：我们演示了实现Pt / HfO2 / TiN存储单元的双层3D垂直电阻式随机存取存储器（ReRAM）堆栈。通过在SiO2 / TiN / SiO2 / TiN / SiO2多层柱的侧壁上进行原子层沉积来生长HfO2转换层。使用兼容CMOS的TiN干法蚀刻可获得陡峭的垂直轮廓。我们采用臭氧进行原位TiN底部界面工程设计，这会导致（a）显着降低成型电压，从而允许在AC脉冲模式下进行无成型操作，以及（b）通过Set过程中的电流顺应性对低电阻状态进行非线性调整操作。垂直ReRAM在垂直堆叠的单元之间表现出出色的读写干扰抗扰性，在10（4）s内保持良好的性能，并在400 K下具有出色的开关稳定性。使用100 ns宽的AC脉冲可实现10（7）写入周期的耐久性，同时具有快速的开关速度还演示了使用仅10 ns宽度的脉冲。有源开关区域被评估为更靠近底部界面，这可以观察到较高的耐久性。

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