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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >MgSe/CdSe coupled quantum wells with optimized MgSe coupling layer thickness and near infrared intersubband absorption around 1.55 mu m
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MgSe/CdSe coupled quantum wells with optimized MgSe coupling layer thickness and near infrared intersubband absorption around 1.55 mu m

机译:MgSe / CdSe耦合量子阱,具有优化的MgSe耦合层厚度和约1.55μm的近红外子带间吸收

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The authors report the optimization of MgSe coupling layer thickness in MgSe/CdSe coupled quantum well (QW) structures and its effect on structural and optical quality as well as electron energy levels in the QWs. The structures were grown by molecular beam epitaxy with MgSe coupling layer thickness varying from 2 mono-layers (MLs), to 4 MLs. X-ray diffraction measurements showed that the thinner the MgSe coupling layer thickness the better the structural quality of the samples. Photoluminescence showed red shift of QW emissions with the decrease of MgSe coupling layer thickness, as a result of stronger coupling of electron states in samples with thinner coupling layers. While in the structures with thinner (2 MLs) coupling layers, the electron energy levels broadening may weaken the intersubband (ISB) transitions, the weak ISB absorption in samples with thicker (4 MLs) coupling layers are likely due to the poorer overall sample quality. Optimized MgSe coupling layer thickness is found to be around 3 MLs, with which a clear coupling effect is observed with ISB absorption around 1.55 mu m.
机译:作者报告了MgSe / CdSe耦合量子阱(QW)结构中MgSe耦合层厚度的优化及其对结构和光学质量以及量子阱中电子能级的影响。通过分子束外延生长该结构,其中MgSe耦合层的厚度从2个单层(ML)到4 ML不等。 X射线衍射测量表明,MgSe耦合层的厚度越薄,样品的结构质量越好。随着MgSe耦合层厚度的减小,光致发光显示出QW发射的红移,这是由于在具有较薄耦合层的样品中电子态的较强耦合。虽然在具有较薄(2 MLs)耦合层的结构中,电子能级变宽可能会削弱子带间(ISB)跃迁,但是具有较厚(4 MLs)耦合层的样品中的ISB吸收较弱,这可能是由于总体样品质量较差。发现优化的MgSe耦合层厚度为约3ML,通过ISB吸收约1.55μm观察到清晰的耦合效果。

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