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Single n(+)-i-n(+) InP nanowires for highly sensitive terahertz detection

机译:用于高度敏感的太赫兹检测的单n(+) - I-N(+)INP纳米线

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摘要

Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength components for highly-integrated THz time-domain spectroscopy (THz-TDS) applications is a promising approach to achieve future low-cost, highly integrable and high-resolution THz tools, which are desirable in many areas spanning from security, industry, environmental monitoring and medical diagnostics to fundamental science. In this work, we present the design and growth of n(+)-i-n(+) InP nanowires. The axial doping profile of the n+-i-n+ InP nanowires has been calibrated and characterized using combined optical and electrical approaches to achieve nanowire devices with low contact resistances, on which the highly-sensitive InP singlenanowire photoconductive THz detectors have been demonstrated. While the n+-i-n+ InP nanowire detector has a only pA-level response current, it has a 2.5 times improved signal-tonoise ratio compared with the undoped InP nanowire detector and is comparable to traditional bulk THz detectors. This performance indicates a promising path to nanowire-based THz electronics for future commercial applications.
机译:开发单纳米线太赫兹(THz)电子器件并将其用作高度集成的THz时域光谱(THZ-TDS)应用是实现未来低成本,高度可叠加和高分辨率THz的有希望的方法工具,在从安全,行业,环境监测和医学诊断到基础科学的许多领域都是可取的。在这项工作中,我们介绍了N(+) - I-N(+)纳米线的设计和增长。已经校准了N + -I-N + INP纳米线的轴向掺杂曲线,并使用组合光学和电气方法表征,以实现具有低接触电阻的纳米线器件,在该纳米线装置上已经证明了高度敏感的INP SinglenaWire光电导探测器。虽然N + -I-N + INP纳米线探测器具有唯一的PA级响应电流,但与未掺杂的INP纳米线检测器相比,它具有2.5倍的信号 - 温度比,并且与传统的散装THZ探测器相当。这种性能表示未来商业应用的基于纳米线的THz电子的有希望的道路。

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  • 来源
    《Nanotechnology》 |2017年第12期|共9页
  • 作者单位

    Australian Natl Univ Res Sch Phys &

    Engn Dept Elect Mat Engn Canberra ACT 2601 Australia;

    Univ Manchester Sch Phys &

    Astron Manchester M13 9PL Lancs England;

    Australian Natl Univ Res Sch Phys &

    Engn Dept Elect Mat Engn Canberra ACT 2601 Australia;

    Univ Oxford Dept Phys Clarendon Lab Oxford OX1 3PU England;

    Australian Natl Univ Res Sch Phys &

    Engn Dept Elect Mat Engn Canberra ACT 2601 Australia;

    Macquarie Univ CNBP Fac Sci ARC Ctr Excellence Nanoscale BioPhoton Sydney NSW 2109 Australia;

    Cardiff Univ Sch Phys &

    Astron Cardiff CF24 3AA S Glam Wales;

    Australian Natl Univ Res Sch Phys &

    Engn Dept Elect Mat Engn Canberra ACT 2601 Australia;

    Univ Oxford Dept Phys Clarendon Lab Oxford OX1 3PU England;

    Australian Natl Univ Res Sch Phys &

    Engn Dept Elect Mat Engn Canberra ACT 2601 Australia;

    Australian Natl Univ Res Sch Phys &

    Engn Dept Elect Mat Engn Canberra ACT 2601 Australia;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

    InP nanowire; axial doping; terahertz; optoelectronics; photonics; detector;

    机译:INP纳米线;轴向掺杂;太赫兹;光电子;光子学;探测器;

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