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首页> 外文期刊>Nanotechnology >Flexible resistive random access memory devices by using NiOx/GaN microdisk arrays fabricated on graphene films
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Flexible resistive random access memory devices by using NiOx/GaN microdisk arrays fabricated on graphene films

机译：灵活的电阻随机存取存储器通过使用石墨烯薄膜制造的NIOx / GaN微磁芯片阵列

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摘要

We report flexible resistive random access memory (ReRAM) arrays fabricated by using NiOx/GaN microdisk arrays on graphene films. The ReRAM device was created from discrete GaN microdisk arrays grown on graphene films produced by chemical vapor deposition, followed by deposition of NiOx thin layers and Au metal contacts. The microdisk ReRAM arrays were transferred to flexible plastic substrates by a simple lift-off technique. The electrical and memory characteristics of the ReRAM devices were investigated under bending conditions. Resistive switching characteristics, including cumulative probability, endurance, and retention, were measured. After 1000 bending repetitions, no significant change in the device characteristics was observed. The flexible ReRAM devices, constructed by using only inorganic materials, operated reliably at temperatures as high as 180 degrees C.
机译：我们报告了通过在石墨烯薄膜上使用NIOx / GaN Microdisk阵列制造的柔性电阻随机存取存储器（RERAM）阵列。 RERAM器件是由在通过化学气相沉积产生的石墨烯薄膜上生长的离散GaN微磁盘阵列，然后沉积NiOx薄层和Au金属触点。 通过简单的剥离技术将微磁镜reram阵列转移到柔性塑料基板上。 在弯曲条件下研究了RERAM器件的电气和存储器特性。 测量电阻切换特性，包括累积概率，耐久性和保留。 在1000次弯曲重复之后，观察到设备特性没有显着变化。 通过仅使用无机材料构造的柔性RERAM器件，在高达180℃的温度下可靠地操作。

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