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Enhanced resistive switching characteristics in Al2O3 memory devices by embedded Ag nanoparticles

机译：通过嵌入式AG纳米颗粒增强AL2O3存储器件中的电阻切换特性

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In this paper, Al2O3/Ag/Al2O3 sandwiched thin films were deposited by magnetron sputtering. Al2O3 thin films with embedded Ag nanoparticles (AgNPs) have been fabricated by adopting appropriate experimental parameters. The measurements on the resistive switching behaviors demonstrated that the embedded AgNPs could substantially enhance the local electric field, and effectively reduce the switching voltages, resulting in a sharply increased OFF/ON ratio up to 10(6) at 0.5 V. Furthermore, the cycling stability was considerably improved owing to the reduced randomness for the formation and rupture of conductive filaments (CFs). AgNPs could also contribute with movable Ag ions, and the Ti top electrode usually reacts with Al2O3 promoting the formation of oxygen vacancies. As a result, a hybrid CF with better high-temperature stability was induced. Comparatively, if the embedded Ag sublayer is smooth, the switching parameters become dispersive owing to the random formation and rupture of CFs, and the switching performance is deteriorated. A physical model was proposed to understand the effect of the embedded AgNPs.
机译：在本文中，通过磁控溅射沉积夹层薄膜的Al 2 O 3 / Ag / Al2O3。通过采用适当的实验参数制造具有嵌入Ag纳米颗粒（AgNP）的Al2O3薄膜。电阻切换行为上的测量证明，嵌入的AGNP可以基本上增强局部电场，并有效地降低开关电压，从而导致速度急剧增加/接通比率为0.5V。此外，循环由于导电长丝（CFS）的形成和破裂的随机性降低，稳定性显着改善。 AgNP还可以用可移动的Ag离子贡献，Ti顶电极通常与Al 2 O 3反应促进氧空位的形成。结果，诱导具有更好的高温稳定性的杂交CF。相比之下，如果嵌入式AG子层光滑，由于CF的随机形成和破裂，开关参数变得分散，并且切换性能劣化。提出了物理模型来了解嵌入式AGNP的效果。

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