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首页> 外文期刊>Synthetic Metals >Enhancement of microstructure and electrical conductivity of N, N '-dimethyl-3,4,9,10-perylenedicarboximide nanostructured films by thermal annealing for photoelectronic applications
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Enhancement of microstructure and electrical conductivity of N, N '-dimethyl-3,4,9,10-perylenedicarboximide nanostructured films by thermal annealing for photoelectronic applications

机译：通过热退火对光电应用的热退火来提高N，N'-Dimethyl-3,4,9,10-一丁二甲基酰亚胺酰亚胺酰胺膜的微观结构和导电性

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摘要

Thin films of N, N'-Dimethyl-3,4,9,10-perylenedicarboximide (DMPDC) were prepared using thermal vacuum evaporating method. Fourier-transform infrared investigated the molecular structure of DMPDC in the form of powder, as well as the as-deposited, and the annealed DMPDC thin films, which reveals that the DMPDC thin films are realized by their thermal stability. The analysis of X-ray diffraction (XRD) of DMPDC in its powder form was observed to be polycrystalline with orthorhombic structure, whereas the XRD analysis of DMPDC films confirms that these films have nanostructure feature which is accompanied by increasing of crystallite size and decreasing of dislocation density as the annealing temperature increases. These results affirm that the annealing treatment enhanced the crystallite of DMPDC thin films. The electrical conductivity versus temperature was measured by applying the Arrhenius law. Also, it was found that the activation energy decreased with the increase of the annealed temperature. The current-density-voltage characteristics of as-deposited DMPDC films in the dark and at various temperatures were investigated. These results pointed out that the conduction mechanism of DMPDC films was ohmic in low voltage range. While in the high-voltage range the space charge limited conductivity was dominant and can be explained by a single dominating trap level.
机译：使用热真空蒸发方法制备N，N'-二甲基-3,4,9,10-10-10-10-10-10-10-10-10-10-二苯二甲硅基纤维酰亚胺（DMPDC）。傅里叶变换红外线研究了粉末的形式的DMPDC的分子结构，以及沉积的和退火DMPDC薄膜，显示DMPDC薄膜通过其热稳定性实现。观察到其粉末形式DMPDC的X射线衍射（XRD）的分析是具有正交结构的多晶，而DMPDC膜的XRD分析证实这些薄膜具有纳米结构特征，其伴随着晶体尺寸的增加和降低脱位密度随着退火温度的增加。这些结果证明退火处理增强了DMPDC薄膜的微晶。通过施加Arhenius法测量电导率与温度。此外，发现活化能量随着退火温度的增加而降低。研究了黑暗和各种温度下沉积的DMPDC膜的电流密度 - 电压特性。这些结果指出，DMPDC膜的导通机制在低电压范围内欧姆。虽然在高电压范围内，空间充电有限的导电性是显性的，并且可以通过单一主导陷阱水平来解释。

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